电源学报2024，Vol.22Issue(4)：280-291,12.DOI:10.13234/j.issn.2095-2805.2024.4.280
一种用于改善IGBT开关过冲的主动栅极控制技术
Active Gate Control Technology for Improving Switching Overshoots of IGBTs
摘要
Abstract
The wide applications of insulated gate bipolar transistors(IGBTs)pose high requirements for their switching performance.However,the conventional gate drive(CGD)has limited regulation effect on voltage and current overshoots in the switching process of IGBTs,because it always sacrifices the switching time and switching loss while reducing overshoots.A novel active gate drive(AGD)control method is proposed to suppress the current and voltage overshoots generated in the switching process of IGBTs,i.e.,the driving voltage at the high di/dt and dv/dt stages of IGBTs is adjusted to reduce the changing rates of current and voltage,so as to suppress the current and voltage overshoots.Experimental results show that compared with the conventional driving methods,the proposed method can significantly reduce the current and voltage overshoots in the switching processes of IGBTs without reducing the switching speed or increasing the switching loss.关键词
绝缘栅双极型晶体管/主动栅极驱动/电压和电流过冲Key words
Insulated gate bipolar transistor(IGBT)/active gate drive(AGD)/voltage and current overshoots分类
信息技术与安全科学引用本文复制引用
谢海超,王学梅..一种用于改善IGBT开关过冲的主动栅极控制技术[J].电源学报,2024,22(4):280-291,12.基金项目
国家自然科学基金资助项目(51577074)This work is supported by National Natural Science Foundation of China under the grant 51577074 （51577074）
