Zn2+掺杂MgGa2O4:Ni2+近红外二区发光材料制备、表征及其成像应用研究OA北大核心CSTPCD
Preparation and Characterization of Zn2+-doped MgGa2O4:Ni2+NIR-Ⅱ Phosphors and Their Application in Imaging
通过水热法结合后期真空热处理的方法制备了具有反尖晶石结构的ZnxMg0.993-xGa2O4:0.7％Ni2+(x=0～0.5)(ZMGO︰Ni2+)近红外二区(NIR-Ⅱ:1000～1700 nm)荧光粉.随着Zn2+掺杂量的增加,ZMGO︰Ni2+粉体样品的粒子尺寸逐渐变大.在635 nm激光激发下,可观测到粉体样品位于～1279 nm处的宽带发射峰,其可被归属为Ni2+的特征发射.此外,Zn2+掺杂使样品荧光猝灭的热激活能由244 meV减小到224 meV.采用发光强度最强的ZMGO︰Ni2+粉体样品与620 nm红光LED芯片封装成NIR-Ⅱ荧光粉转换LED(NIR-Ⅱpc-LED),并基于NIR-Ⅱ光穿透能力强和不产生生物组织自荧光的特性,以NIR-Ⅱpc-LED为光源,分别研究了其在有遮挡情况的夜视成像和生物组织成像上的应用.
Herein,a series of ZnxMg0.993-xGa2O4:0.7％Ni2+(x=0-0.5)(ZMGO︰Ni2+) phosphors with inverse spinel structure were successfully prepared through a hydrothermal method followed by a vacuum heat treatment,emitting within the 2nd near-infrared transmittance window(NIR-Ⅱ:1000-1700 nm).The particle size of ZMGO︰Ni2+phos-phors exhibited a gradual increase with increasing Zn2+doping content.Upon excitation by a 635 nm laser,ZMGO︰Ni2+phosphors exhibited a broad emission band centered at approximately 1279 nm,which can be attributed to the characteristic emission of Ni2+.Their thermal activation energy is decreased from 244 meV to 224 meV after Zn2+dop-ing.A NIR-Ⅱ phosphor-converted light-emitting diode (NIR-Ⅱ pc-LED) was fabricated by employing ZMGO︰Ni2+phosphors with the strongest luminescence intensity,in conjunction with a 620 nm red LED chip.Based on high pene-tration ability,minimal scattering property and auto-fluorescence-free background of NIR-Ⅱ light,night vision imaging with occlusion and tissue imaging were performed using the NIR-Ⅱ pc-LED,respectively.
张琳;杨健;李胜男;王帅;祝汉成;严端廷;徐长山;刘玉学
东北师范大学物理学院,吉林长春 130024
物理学
光致发光过渡金属离子近红外二区荧光粉
photoluminescencetransition metal ionNIR-Ⅱphosphors
《发光学报》 2024 (008)
1311-1324 / 14
国家自然科学基金(12204093,12074062,12374391);吉林省自然科学基金(20220101018JC)Supported by National Natural Science Foundation of China(12204093,12074062,12374391);Jilin Scientific and Technological Development Program(20220101018JC)
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