发光学报2024，Vol.45Issue(8)：1311-1324,14.DOI:10.37188/CJL.20240119
Zn2+掺杂MgGa2O4:Ni2+近红外二区发光材料制备、表征及其成像应用研究
Preparation and Characterization of Zn2+-doped MgGa2O4:Ni2+NIR-Ⅱ Phosphors and Their Application in Imaging
摘要
Abstract
Herein,a series of ZnxMg0.993-xGa2O4:0.7％Ni2+(x=0-0.5)(ZMGO︰Ni2+) phosphors with inverse spinel structure were successfully prepared through a hydrothermal method followed by a vacuum heat treatment,emitting within the 2nd near-infrared transmittance window(NIR-Ⅱ:1000-1700 nm).The particle size of ZMGO︰Ni2+phos-phors exhibited a gradual increase with increasing Zn2+doping content.Upon excitation by a 635 nm laser,ZMGO︰Ni2+phosphors exhibited a broad emission band centered at approximately 1279 nm,which can be attributed to the characteristic emission of Ni2+.Their thermal activation energy is decreased from 244 meV to 224 meV after Zn2+dop-ing.A NIR-Ⅱ phosphor-converted light-emitting diode (NIR-Ⅱ pc-LED) was fabricated by employing ZMGO︰Ni2+phosphors with the strongest luminescence intensity,in conjunction with a 620 nm red LED chip.Based on high pene-tration ability,minimal scattering property and auto-fluorescence-free background of NIR-Ⅱ light,night vision imaging with occlusion and tissue imaging were performed using the NIR-Ⅱ pc-LED,respectively.关键词
光致发光/过渡金属离子/近红外二区/荧光粉Key words
photoluminescence/transition metal ion/NIR-Ⅱ/phosphors分类
物理学引用本文复制引用
张琳,杨健,李胜男,王帅,祝汉成,严端廷,徐长山,刘玉学..Zn2+掺杂MgGa2O4:Ni2+近红外二区发光材料制备、表征及其成像应用研究[J].发光学报,2024,45(8):1311-1324,14.基金项目
国家自然科学基金(12204093,12074062,12374391) （12204093,12074062,12374391）
吉林省自然科学基金(20220101018JC)Supported by National Natural Science Foundation of China(12204093,12074062,12374391) （20220101018JC）
Jilin Scientific and Technological Development Program(20220101018JC) （20220101018JC）
