发光学报2024，Vol.45Issue(8)：1325-1333,9.DOI:10.37188/CJL.20240130
NH3/N2复合热退火技术改善高浓度Mg掺杂GaN材料性能
Enhanced Properties of Heavily Mg-doped GaN by Combining Thermal Annealing Processes in NH3/N2
摘要
Abstract
The effect of a novel post-growth process,i.e.high-temperature thermal annealing process in NH3,on the crystal quality,luminescence property,and electrical conductivity of the heavily Mg-doped GaN was studied.The experimental results showed that,compared with the traditional high-temperature annealing process in N2,the high-temperature thermal annealing process in NH3 can improve crystal quality in the heavily Mg-doped GaN,while promote the further effective doping of Mg acceptors,resulting in an enhancement of the intensity of the blue luminescence band in its photoluminescence spectra.The heavily Mg-doped GaN with sig-nificantly lower background electron concentration was obtained by combining high-temperature thermal anneal-ing process in NH3 with low-temperature thermal annealing process in N2.This is because that the thermal de-composition products of NH3 in the post-growth process can effectively reduce the concentration of shallow do-nor-type defects such as N vacancies and interstitial Ga atoms in the material,ultimately improving electrical conductivity of the heavily Mg-doped GaN.关键词
氮化镓/Mg掺杂/热退火工艺/氨气Key words
gallium nitride/Mg doped/thermal annealing/ammonia分类
数理科学引用本文复制引用
蒋宗霖,闫丹,张宁,魏同波,王军喜,魏学成..NH3/N2复合热退火技术改善高浓度Mg掺杂GaN材料性能[J].发光学报,2024,45(8):1325-1333,9.基金项目
国家重点研发计划(2022YFF0705600) （2022YFF0705600）
国家自然科学基金(62135013)Supported by National Key R&D Program of China(2022YFF0705600) （62135013）
National Natural Science Foundation of China(62135013) （62135013）
