机电工程技术2024，Vol.53Issue(8)：28-31,46,5.DOI:10.3969/j.issn.1009-9492.2024.00068
h-BN中子探测器制备及中子响应
Preparation and Neutron Response of h-BN Neutron Detector
摘要
Abstract
h-BN exhibits significant potential in neutron detection technology due to its high reaction cross-section and high efficiency in directly detecting neutrons.The low-pressure chemical vapor deposition mechanism of h-BN grown by the three-step dehydrogenation method is analyzed.In order to achieve high-quality h-BN crystals,the sublimation temperature of ammonia borane precursor is identified as a critical parameter.Through the optimization of the sublimation temperature of the ammonia borane precursor,high-quality h-BN is successfully grown on a sapphire substrate using the LPCVD epitaxial growth technique.The fabrication of a neutron detector is accomplished on h-BN through semiconductor fabrication processes,and single neutron electrical signals are obtained under neutron source irradiation at different sublimation temperatures of ammonia borane.The neutron response test results demonstrate that,when the set temperature is 165℃and 170℃respectively,voltage signals at 2.088 V and 2.16 V are obtained,and the charge collection efficiency reaches 87%and 90%respectively.The measured voltage value in the experiment shows good agreement with the theoretical expected value.This experimental study provides empirical data for future wafer-level and high-quality h-BN crystal growth,and crucial technological support for the large-scale commercialization of h-BN neutron detectors.关键词
h-BN/中子探测器/氨硼烷/升华温度Key words
h-BN/neutron detector/ammonia borane/sublimation temperature分类
能源科技引用本文复制引用
焦伟勇,黄河,刘吉珍,朱志甫,王旭,王玮,邹继军,龙炳旭..h-BN中子探测器制备及中子响应[J].机电工程技术,2024,53(8):28-31,46,5.基金项目
国家自然科学基金面上基金资助项目(61964001,12275049,62211530107) （61964001,12275049,62211530107）
河南省科技攻关项目(242102520013) （242102520013）
江西省重点研发计划资助项目(20212BBG73012) （20212BBG73012）
核技术应用教育部工程研究中心开放基金资助(HJS2021-4) （HJS2021-4）
