空间电子技术2024，Vol.21Issue(4)：99-104,6.DOI:10.3969/j.issn.1674-7135.2024.04.015
基于GaN HEMT的80 GHz～140 GHz超宽带功率放大器
An 80 GHz～140 GHz ultra-broadband power amplifier based on GaN HEMT
刘仁福 1王维波 1陶洪琪 1郭方金 1骆晨杰 1商德春 1张亦斌 1吴少兵1
作者信息
摘要
Abstract
In this article,an ultra-broadband power amplifier covering W and F bands was developed using the 50 nm GaN HEMT technology of Nanjing Electronic Devices Institute in order to meet the demand for broadband power amplifiers in millimeter wave communications and other applications.First,the experimental data was fitted and extrapolated using the model to get the broadband power impedance of the HEMT.Secondly,the LC structure and high-low impedance microstrip lines were used for broadband matching to design the matching circuits of the output stage,inter-stages and input stage.Finally,the inter-stage matching circuits are comprehensively optimized and the Lange coupler is used for power combining.The measured typical gain and saturated output power of fabricated power amplifier is about 18 dB and 100 mW,respectively,across over 80 GHz～140 GHz range.A power flatness of±1 dB and high return loss were obtained which indicate broad application prospects in the terahertz fields.关键词
氮化镓/超宽带/功率放大器Key words
GaN/ultra-broadband/power amplifier分类
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刘仁福,王维波,陶洪琪,郭方金,骆晨杰,商德春,张亦斌,吴少兵..基于GaN HEMT的80 GHz～140 GHz超宽带功率放大器[J].空间电子技术,2024,21(4):99-104,6.
