无机材料学报2024，Vol.39Issue(8)：903-910,中插4-中插7,12.DOI:10.15541/jim20240057
Te基热电器件反常界面层生长行为及界面稳定性研究
Interface Layer of Te-based Thermoelectric Device:Abnormal Growth and Interface Stability
摘要
Abstract
Though Te has excellent figure of merit(ZT),the severe element diffusion and reaction at the Te/metallic-electrodes interface render high contact resistivity(ρc)and low device conversion efficiency(η).Therefore,it is critical to develop suitable barrier layers for optimizing the bonding between Te and metallic electrodes.In this work,an appropriate barrier layer,NiTe2-m(NixTe(x=0.500～0.908)),was screened based on gradient structure.No reaction layers and defects at the interface of Ni0.5Te/Te0.985Sb0.015/Ni0.5Te were detected before and after aging at 473 K.Low ρc(less than 10 μΩ·cm2)and high η(about 75%of the theoretical value under a temperature difference of 180 K(hot end:473 K))were achieved and maintained stable during aging,showing excellent thermal stability of the interface.When x>0.500,the thickness of the interface reaction layer decreased with x increasing,showing the retarding effect dominating the growth behavior of interface reaction layer not from the usual thermodynamic factors,such as interface reaction energy and composition gradient,but from the"atom vacancy"on formation of the reaction layer.关键词
Te/热电器件/扩散动力学/阻挡层/热稳定性Key words
Te/thermoelectric device/diffusion dynamic/barrier/thermal stability分类
信息技术与安全科学引用本文复制引用
苗鑫,闫世强,韦金豆,吴超,樊文浩,陈少平..Te基热电器件反常界面层生长行为及界面稳定性研究[J].无机材料学报,2024,39(8):903-910,中插4-中插7,12.基金项目
国家自然科学基金(52202277) （52202277）
山西省科技合作与交流专项项目(202104041101007) （202104041101007）
山西省省筹资金资助回国留学人员科研项目(2023-083) National Natural Science Foundation of China(52202277) （2023-083）
Special Project of Science and Technology Cooperation and Exchange of Shanxi Province(202104041101007) （202104041101007）
Shanxi Scholarship Council of China(2023-083) （2023-083）
