New-Generation Ferroelectric AlScN MaterialsOACSTPCDEI
New-Generation Ferroelectric AlScN Materials
Ferroelectrics have great potential in the field of non-volatile memory due to programmable polarization states by external electric field in nonvolatile manner.However,complementary metal oxide semiconductor compatibility and uniformity of ferroelectric performance after size scaling have always been two thorny issues hindering practical application of ferroelectric memory devices.The emerging ferroelectricity of wurtzite structure nitride offers opportu-nities to circumvent the dilemma.This review covers the mechanism of ferroelectricity and domain dynamics in ferroelectric AlScN films.The performance optimization of AlScN films grown by different tech-niques is summarized and their applications for memories and emerg-ing in-memory computing are illustrated.Finally,the challenges and perspectives regarding the commercial avenue of ferroelectric AlScN are discussed.
Yalong Zhang;Qiuxiang Zhu;Bobo Tian;Chungang Duan
Key Laboratory of Polar Materials and Devices,Ministry of Education,Shanghai Center of Brain-Inspired Intelligent Materials and Devices,Department of Electronics,East China Normal University,Shanghai 200241,People's Republic of ChinaKey Laboratory of Polar Materials and Devices,Ministry of Education,Shanghai Center of Brain-Inspired Intelligent Materials and Devices,Department of Electronics,East China Normal University,Shanghai 200241,People's Republic of China||Collaborative Innovation Center of Extreme Optics,Shanxi University,Taiyuan 030006,Shanxi,People's Republic of China
AlScNFerroelectricsNonvolatile memoryIn-memory computing
《纳微快报（英文）》 2024 (011)
88-118 / 31
Thank fundings of National Natural Science Foundation of China(No.T2222025,62174053 and 61804055),National Key Research and Development program of China(No.2021YFA1200700),Shanghai Science and Technology Innovation Action Plan(No.21JC1402000 and 21520714100)and the Funda-mental Research Funds for the Central Universities.
评论