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New-Generation Ferroelectric AlScN Materials

Yalong Zhang Qiuxiang Zhu Bobo Tian Chungang Duan

纳微快报（英文）2024，Vol.16Issue(11)：88-118,31.

纳微快报（英文）2024，Vol.16Issue(11)：88-118,31.DOI:10.1007/s40820-024-01441-1

New-Generation Ferroelectric AlScN Materials

Yalong Zhang ¹Qiuxiang Zhu ¹Bobo Tian ¹Chungang Duan²

作者信息

1. Key Laboratory of Polar Materials and Devices,Ministry of Education,Shanghai Center of Brain-Inspired Intelligent Materials and Devices,Department of Electronics,East China Normal University,Shanghai 200241,People's Republic of China
2. Key Laboratory of Polar Materials and Devices,Ministry of Education,Shanghai Center of Brain-Inspired Intelligent Materials and Devices,Department of Electronics,East China Normal University,Shanghai 200241,People's Republic of China||Collaborative Innovation Center of Extreme Optics,Shanxi University,Taiyuan 030006,Shanxi,People's Republic of China
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摘要

关键词

AlScN/Ferroelectrics/Nonvolatile memory/In-memory computing

Key words

AlScN/Ferroelectrics/Nonvolatile memory/In-memory computing

引用本文复制引用

Yalong Zhang,Qiuxiang Zhu,Bobo Tian,Chungang Duan..New-Generation Ferroelectric AlScN Materials[J].纳微快报（英文）,2024,16(11):88-118,31.

基金项目

Thank fundings of National Natural Science Foundation of China(No.T2222025,62174053 and 61804055),National Key Research and Development program of China(No.2021YFA1200700),Shanghai Science and Technology Innovation Action Plan(No.21JC1402000 and 21520714100)and the Funda-mental Research Funds for the Central Universities. （No.T2222025,62174053 and 61804055）

纳微快报（英文）

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ISSN：2311-6706

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