现代信息科技2024，Vol.8Issue(15)：24-27,4.DOI:10.19850/j.cnki.2096-4706.2024.15.006
电化学沉积WS3薄膜及其忆阻特性研究
Research on Electrochemical Deposition and Memristor Properties of WS3 Thin Film
段尧禹 1万茜1
作者信息
- 1. 江南大学 物联网技术应用教育部工程中心,江苏 无锡 214122
- 折叠
摘要
Abstract
This paper researches a vertical array memristor based on two-dimensional materials.To address challenges like the narrow growth window of two-dimensional materials and the difficulty of producing large-area single crystals,large-area WS3 thin films are deposited through controlled electrochemical deposition.The I-V characteristics of four 2×2 memristor units are scanned,and all of them show bipolar memristor characteristics.The switch life of these devices reach up to 1.5×104 times,and they exhibit a clear response to simulated neural training pulse signals.The achievement of large area two-dimensional materials and the stable performance of the memristor offer crucial electrical parameters and promising application prospect for highly integrated memristor devices.关键词
忆阻器/WS3 薄膜/阵列/脉冲Key words
memristor/WS3 thin film/array/pulse分类
信息技术与安全科学引用本文复制引用
段尧禹,万茜..电化学沉积WS3薄膜及其忆阻特性研究[J].现代信息科技,2024,8(15):24-27,4.
