电化学沉积WS3薄膜及其忆阻特性研究OA

This paper researches a vertical array memristor based on two-dimensional materials.To address challenges like the narrow growth window of two-dimensional materials and the difficulty of producing large-area single crystals,large-area WS3 thin films are deposited through controlled electrochemical deposition.The I-V characteristics of four 2×2 memristor units are scanned,and all of them show bipolar memristor characteristics.The switch life of these devices reach up to 1.5×104 times,and they exhibit a clear response to simulated neural training pulse signals.The achievement of large area two-dimensional materials and the stable performance of the memristor offer crucial electrical parameters and promising application prospect for highly integrated memristor devices.