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基于有源箝位技术的SiC MOSFET串联均压有源驱动电路研究

项鹏飞 郝瑞祥 王启丞 游小杰 徐云飞 袁帆

中国电机工程学报2024,Vol.44Issue(16):6565-6577,13.
中国电机工程学报2024,Vol.44Issue(16):6565-6577,13.DOI:10.13334/j.0258-8013.pcsee.230221

基于有源箝位技术的SiC MOSFET串联均压有源驱动电路研究

Voltage Balancing Circuit for Series-connected SiC MOSFETs Based on Active Clamping

项鹏飞 1郝瑞祥 1王启丞 1游小杰 2徐云飞 3袁帆1

作者信息

  • 1. 北京交通大学电气工程学院,北京市海淀区 100044
  • 2. 轨道交通安全协同创新中心,北京市海淀区 100044
  • 3. 先进输电技术国家重点实验室(中国电力科学研究院有限公司),北京市 昌平区 102209
  • 折叠

摘要

Abstract

The series connection technology of power semiconductor devices is one of the effective ways to achieve high-voltage applications.However,the dynamic voltage imbalance between the series devices is the main constraint of the series technology.In this paper,the turn-off behaviors of the series-connected voltage imbalance are analyzed and the mechanism of the imbalance voltage is obtained.Then,a voltage balancing circuit for series-connected silicon carbide metal-oxide-semiconductor field-effect transistor(SiC MOSFET)based on active clamping is proposed.It detects the voltage imbalance and clamps the peak voltage of the series devices by the active clamping circuit,and then controls the gate charge and switching transient behavior of the devices by feedback circuit,so as to realize voltage balancing during the turn-off process.There is no adjusted switching cycle with voltage imbalance in the method,which can realize series voltage balancing in each switching cycle even under the alternating load.Furthermore,the circuit principle and parameter design of the proposed method are introduced,and the effectiveness of the voltage balancing method is verified by experiment.The proposed method retains the strong expansibility of the active clamping circuit,which is an auxiliary circuit independent of the original gate driver.Moreover,there are no programmed logical chips or additional signal isolation in the control circuit.

关键词

碳化硅金属-氧化物半导体场效应晶体管/串联/有源箝位/均压控制

Key words

silicon carbide metal-oxide-semiconductor field-effect transistor(SiC MOSFET)/series connection/active clamping/voltage balancing control

分类

信息技术与安全科学

引用本文复制引用

项鹏飞,郝瑞祥,王启丞,游小杰,徐云飞,袁帆..基于有源箝位技术的SiC MOSFET串联均压有源驱动电路研究[J].中国电机工程学报,2024,44(16):6565-6577,13.

基金项目

国家重点研发计划项目(2022YFB2404100,2022YFB2404105).National Key R&D Program of China(2022YFB2404100,2022YFB2404105). (2022YFB2404100,2022YFB2404105)

中国电机工程学报

OA北大核心CSTPCD

0258-8013

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