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Switching Behavior of Cascode GaN Under Influence of Gate Driver

Bin Luo Guangzhao Luo Sihai Li

CSEE Journal of Power and Energy Systems2024，Vol.10Issue(4)：P.1816-1833,18.

CSEE Journal of Power and Energy Systems2024，Vol.10Issue(4)：P.1816-1833,18.DOI:10.17775/CSEEJPES.2022.00580

Switching Behavior of Cascode GaN Under Influence of Gate Driver

Bin Luo ¹Guangzhao Luo ¹Sihai Li¹

作者信息

1. School of Automation,Northwestern Polytechnical University,Xi’an 710072,China
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摘要

关键词

Gallium nitride(GaN)/gate driver/oscillation and overshoot/switching characteristics

分类

信息技术与安全科学

引用本文复制引用

Bin Luo,Guangzhao Luo,Sihai Li..Switching Behavior of Cascode GaN Under Influence of Gate Driver[J].CSEE Journal of Power and Energy Systems,2024,10(4):P.1816-1833,18.

基金项目

supported in part by the National Natural Science Foundation of China(51707161). （51707161）

CSEE Journal of Power and Energy Systems

OACSTPCDEI

ISSN：2096-0042

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