High-performance GaSb planar PN junction detectorOACSTPCDEI
This paper examines GaSb short-wavelength infrared detectors employing planar PN junctions. The fabrication was based on the Zn diffusion process and the diffusion temperature was optimized. Characterization revealed a 50% cut-off wavelength of 1.73 μm, a maximum detectivity of 8.73 × 10^(10) cm·Hz^(1/2)/W, and a minimum dark current density of 1.02 × 10^(-5) A/cm^(2).Additionally, a maximum quantum efficiency of 60.3% was achieved. Subsequent optimization of fabrication enabled the realization of a 320 × 256 focal plane array that exhibited satisfactory imaging results. Remarkably, the GaSb planar detectors demonstrated potential in low-cost short wavelength infrared imaging, without requiring material epitaxy or deposition.
Yuanzhi Cui;Hongyue Hao;Shihao Zhang;Shuo Wang;Jing Zhang;Yifan Shan;Ruoyu Xie;Xiaoyu Wang;Chuang Wang;Mengchen Liu;Dongwei Jiang;Yingqiang Xu;Guowei Wang;Donghai Wu;Zhichuan Niu;Derang Cao;
College of Physics,National Demonstration Center for Experimental Applied Physics Education,Qingdao University,Qingdao 266071,China Key Laboratory of Optoelectronic Materials and Devices,Chinese Academy of Sciences,Beijing 100083,ChinaKey Laboratory of Optoelectronic Materials and Devices,Chinese Academy of Sciences,Beijing 100083,China College of Materials Science and Opto-Electronic Technology,University of Chinese Academy of Sciences,Beijing 100049,ChinaKey Laboratory of Optoelectronic Materials and Devices,Chinese Academy of Sciences,Beijing 100083,ChinaCollege of Physics,National Demonstration Center for Experimental Applied Physics Education,Qingdao University,Qingdao 266071,China
电子信息工程
antimonideshort-wave infraredplanar junctionzinc diffusion
《Journal of Semiconductors》 2024 (009)
P.48-52 / 5
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