Growth of two-inch free-standing heteroepitaxial diamond on Ir/YSZ/Si(001)substrates via laser-patterned templatesOACSTPCDEI
As an ultra-wide bandgap semiconductor,diamond garners significant interest due to its exceptional physical properties^([1–3]).These superior characteristics make diamonds highly promising for applications in power electronics^([4]),deep-ultraviolet detectors^([5]),high-energy particle detectors^([6]),and quantum devices based on color centers^([7]).
Pengfei Qu;Peng Jin;Guangdi Zhou;Zhen Wang;Zhanguo Wang;
Laboratory of Solid-State Optoelectronic Information Technology,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China Center of Materials Science and Optoelectronics Engineering,University of Chinese Academy of Sciences,Beijing 100049,China
电子信息工程
templateexceptionaldiamond
《Journal of Semiconductors》 2024 (009)
P.4-6 / 3
supported by the National Key Research and Development Program of China(Grant No.2022YFB3608600);the Beijing Municipal Science and Technology Commission(Grant No.Z181100004418009);the National Natural Science Foundation of China(Grant No.61927806)。
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