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Growth of two-inch free-standing heteroepitaxial diamond on Ir/YSZ/Si(001)substrates via laser-patterned templates

Pengfei Qu Peng Jin Guangdi Zhou Zhen Wang Zhanguo Wang

Journal of Semiconductors2024，Vol.45Issue(9)：P.4-6,3.

Journal of Semiconductors2024，Vol.45Issue(9)：P.4-6,3.DOI:10.1088/1674-4926/24060003

Growth of two-inch free-standing heteroepitaxial diamond on Ir/YSZ/Si(001)substrates via laser-patterned templates

Pengfei Qu ¹Peng Jin ¹Guangdi Zhou ¹Zhen Wang ¹Zhanguo Wang¹

作者信息

1. Laboratory of Solid-State Optoelectronic Information Technology,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China Center of Materials Science and Optoelectronics Engineering,University of Chinese Academy of Sciences,Beijing 100049,China
折叠

摘要

关键词

template/exceptional/diamond

分类

信息技术与安全科学

引用本文复制引用

Pengfei Qu,Peng Jin,Guangdi Zhou,Zhen Wang,Zhanguo Wang..Growth of two-inch free-standing heteroepitaxial diamond on Ir/YSZ/Si(001)substrates via laser-patterned templates[J].Journal of Semiconductors,2024,45(9):P.4-6,3.

基金项目

supported by the National Key Research and Development Program of China(Grant No.2022YFB3608600) （Grant No.2022YFB3608600）

the Beijing Municipal Science and Technology Commission(Grant No.Z181100004418009) （Grant No.Z181100004418009）

the National Natural Science Foundation of China(Grant No.61927806)。（Grant No.61927806）

Journal of Semiconductors

OACSTPCDEI

ISSN：1674-4926

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