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Effects of gallium surfactant on AlN thin films by microwave plasma chemical vapor deposition

Lu Wang Xulei Qin Li Zhang Kun Xu Feng Yang Shaoqian Lu Yifei Li Bosen Liu Guohao Yu Zhongming Zeng Baoshun Zhang

Journal of Semiconductors2024，Vol.45Issue(9)：P.53-60,8.

Journal of Semiconductors2024，Vol.45Issue(9)：P.53-60,8.DOI:10.1088/1674-4926/24020017

Effects of gallium surfactant on AlN thin films by microwave plasma chemical vapor deposition

Lu Wang ¹Xulei Qin ²Li Zhang ³Kun Xu ³Feng Yang ³Shaoqian Lu ¹Yifei Li ¹Bosen Liu ³Guohao Yu ³Zhongming Zeng ³Baoshun Zhang³

作者信息

1. School of Physics,Changchun University of Science and Technology,Changchun 130013,China Nanofabrication Facility,Suzhou Institute of Nano-Tech and Nano-Bionics,Chinese Academy of Sciences,Suzhou 215123,China
2. School of Physics,Changchun University of Science and Technology,Changchun 130013,China
3. Nanofabrication Facility,Suzhou Institute of Nano-Tech and Nano-Bionics,Chinese Academy of Sciences,Suzhou 215123,China
折叠

摘要

关键词

AlN thin film/MPCVD/gallium surfactant/nucleation layer/laser

分类

通用工业技术

引用本文复制引用

Lu Wang,Xulei Qin,Li Zhang,Kun Xu,Feng Yang,Shaoqian Lu,Yifei Li,Bosen Liu,Guohao Yu,Zhongming Zeng,Baoshun Zhang..Effects of gallium surfactant on AlN thin films by microwave plasma chemical vapor deposition[J].Journal of Semiconductors,2024,45(9):P.53-60,8.

基金项目

supported by the Key Research and Development Program of Jilin Provincial Department of Science and Technology (No. 20210201031GX) （No. 20210201031GX）

Innovation capacity building project of Jilin Province (No. 2023C031-2) （No. 2023C031-2）

The Key Research and Development Program of Jiangsu Province (No. BE2022057-1)。（No. BE2022057-1）

Journal of Semiconductors

OACSTPCDEI

ISSN：1674-4926

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