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InGaZnO-based photoelectric synaptic devices for neuromorphic computingOACSTPCDEI

中文摘要

Photoelectric synaptic devices could emulate synaptic behaviors utilizing photoelectric effects and offer promising prospects with their high-speed operation and low crosstalk. In this study, we introduced a novel InGaZnO-based photoelectric memristor. Under both electrical and optical stimulation, the device successfully emulated synaptic characteristics including excitatory postsynaptic current (EPSC), paired-pulse facilitation (PPF), long-term potentiation (LTP), and long-term depression (LTD). Furthermore, we demonstrated the practical application of our synaptic devices through the recognition of handwritten digits. The devices have successfully shown their ability to modulate synaptic weights effectively through light pulse stimulation, resulting in a recognition accuracy of up to 93.4%. The results illustrated the potential of IGZO-based memristors in neuromorphic computing, particularly their ability to simulate synaptic functionalities and contribute to image recognition tasks.

Jieru Song;Jialin Meng;Tianyu Wang;Changjin Wan;Hao Zhu;Qingqing Sun;David Wei Zhang;Lin Chen;

School of Microelectronics,State Key Laboratory of Integrated Chips and Systems,Fudan University,Shanghai 200433,ChinaSchool of Integrated Circuits,Shandong University,Jinan 250100,China National Integrated Circuit Innovation Center,Shanghai 201203,ChinaSchool of Electronic Science and Engineering,Nanjing University,Nanjing 210023,ChinaSchool of Microelectronics,State Key Laboratory of Integrated Chips and Systems,Fudan University,Shanghai 200433,China National Integrated Circuit Innovation Center,Shanghai 201203,China Jiashan Fudan Institute,Jiashan 314102,China

电子信息工程

InGaZnOartificial synapseneuromorphic computingphotoelectric memristor

《Journal of Semiconductors》 2024 (009)

P.42-47 / 6

supported by the National Key Research and Development Program of China (2021YFA1202600);the NSFC (92064009, 22175042);the Science and Technology Commission of Shanghai Municipality (22501100900);the China Postdoctoral Science Foundation (2022TQ0068, 2023M740644);the Shanghai Sailing Program (23YF1402200, 23YF1402400);the Qilu Young Scholar Program of Shandong University。

10.1088/1674-4926/24040038

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