首页|期刊导航|Journal of Semiconductors|InGaZnO-based photoelectric synaptic devices for neuromorphic computing
Journal of Semiconductors2024,Vol.45Issue(9):P.42-47,6.DOI:10.1088/1674-4926/24040038
InGaZnO-based photoelectric synaptic devices for neuromorphic computing
摘要
关键词
InGaZnO/artificial synapse/neuromorphic computing/photoelectric memristor分类
信息技术与安全科学引用本文复制引用
Jieru Song,Jialin Meng,Tianyu Wang,Changjin Wan,Hao Zhu,Qingqing Sun,David Wei Zhang,Lin Chen..InGaZnO-based photoelectric synaptic devices for neuromorphic computing[J].Journal of Semiconductors,2024,45(9):P.42-47,6.基金项目
supported by the National Key Research and Development Program of China (2021YFA1202600) (2021YFA1202600)
the NSFC (92064009, 22175042) (92064009, 22175042)
the Science and Technology Commission of Shanghai Municipality (22501100900) (22501100900)
the China Postdoctoral Science Foundation (2022TQ0068, 2023M740644) (2022TQ0068, 2023M740644)
the Shanghai Sailing Program (23YF1402200, 23YF1402400) (23YF1402200, 23YF1402400)
the Qilu Young Scholar Program of Shandong University。 ()