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InGaZnO-based photoelectric synaptic devices for neuromorphic computing

Jieru Song Jialin Meng Tianyu Wang Changjin Wan Hao Zhu Qingqing Sun David Wei Zhang Lin Chen

Journal of Semiconductors2024,Vol.45Issue(9):P.42-47,6.
Journal of Semiconductors2024,Vol.45Issue(9):P.42-47,6.DOI:10.1088/1674-4926/24040038

InGaZnO-based photoelectric synaptic devices for neuromorphic computing

Jieru Song 1Jialin Meng 1Tianyu Wang 2Changjin Wan 3Hao Zhu 1Qingqing Sun 1David Wei Zhang 1Lin Chen4

作者信息

  • 1. School of Microelectronics,State Key Laboratory of Integrated Chips and Systems,Fudan University,Shanghai 200433,China
  • 2. School of Integrated Circuits,Shandong University,Jinan 250100,China National Integrated Circuit Innovation Center,Shanghai 201203,China
  • 3. School of Electronic Science and Engineering,Nanjing University,Nanjing 210023,China
  • 4. School of Microelectronics,State Key Laboratory of Integrated Chips and Systems,Fudan University,Shanghai 200433,China National Integrated Circuit Innovation Center,Shanghai 201203,China Jiashan Fudan Institute,Jiashan 314102,China
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摘要

关键词

InGaZnO/artificial synapse/neuromorphic computing/photoelectric memristor

分类

信息技术与安全科学

引用本文复制引用

Jieru Song,Jialin Meng,Tianyu Wang,Changjin Wan,Hao Zhu,Qingqing Sun,David Wei Zhang,Lin Chen..InGaZnO-based photoelectric synaptic devices for neuromorphic computing[J].Journal of Semiconductors,2024,45(9):P.42-47,6.

基金项目

supported by the National Key Research and Development Program of China (2021YFA1202600) (2021YFA1202600)

the NSFC (92064009, 22175042) (92064009, 22175042)

the Science and Technology Commission of Shanghai Municipality (22501100900) (22501100900)

the China Postdoctoral Science Foundation (2022TQ0068, 2023M740644) (2022TQ0068, 2023M740644)

the Shanghai Sailing Program (23YF1402200, 23YF1402400) (23YF1402200, 23YF1402400)

the Qilu Young Scholar Program of Shandong University。 ()

Journal of Semiconductors

OACSTPCDEI

1674-4926

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