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首页|期刊导航|Nano-Micro Letters|Performance Limits and Advancements in Single 2D Transition Metal Dichalcogenide Transistor

Performance Limits and Advancements in Single 2D Transition Metal Dichalcogenide Transistor

Jing Chen Ming-Yuan Sun Zhen-Hua Wang Zheng Zhang Kai Zhang Shuai Wang Yu Zhang Xiaoming Wu Tian-Ling Ren Hong Liu Lin Han

Nano-Micro Letters2024,Vol.16Issue(12):P.134-188,55.
Nano-Micro Letters2024,Vol.16Issue(12):P.134-188,55.DOI:10.1007/s40820-024-01461-x

Performance Limits and Advancements in Single 2D Transition Metal Dichalcogenide Transistor

Jing Chen 1Ming-Yuan Sun 2Zhen-Hua Wang 2Zheng Zhang 2Kai Zhang 2Shuai Wang 2Yu Zhang 3Xiaoming Wu 4Tian-Ling Ren 4Hong Liu 5Lin Han6

作者信息

  • 1. Institute of Marine Science and Technology,Shandong University,Qingdao 266237,Shandong,People’s Republic of China BNRist,Tsinghua University,Beijing 100084,People’s Republic of China
  • 2. Institute of Marine Science and Technology,Shandong University,Qingdao 266237,Shandong,People’s Republic of China
  • 3. Institute of Marine Science and Technology,Shandong University,Qingdao 266237,Shandong,People’s Republic of China Shenzhen Research Institute of Shandong University,Shenzhen 518057,People’s Republic of China
  • 4. School of Integrated Circuits and Beijing National Research Center for Information Science and Technology(BNRist),Tsinghua University,Beijing 100084,People’s Republic of China
  • 5. State Key Laboratory of Crystal Materials,Shandong University,Jinan 250100,Shandong,People’s Republic of China
  • 6. Institute of Marine Science and Technology,Shandong University,Qingdao 266237,Shandong,People’s Republic of China State Key Laboratory of Crystal Materials,Shandong University,Jinan 250100,Shandong,People’s Republic of China Shenzhen Research Institute of Shandong University,Shenzhen 518057,People’s Republic of China Shandong Engineering Research Center of Biomarker and Artificial Intelligence Application,Jinan 250100,People’s Republic of China
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摘要

关键词

Two-dimensional transistors/Dimension limits/Performance limits/Memory devices/Artificial synapses

分类

信息技术与安全科学

引用本文复制引用

Jing Chen,Ming-Yuan Sun,Zhen-Hua Wang,Zheng Zhang,Kai Zhang,Shuai Wang,Yu Zhang,Xiaoming Wu,Tian-Ling Ren,Hong Liu,Lin Han..Performance Limits and Advancements in Single 2D Transition Metal Dichalcogenide Transistor[J].Nano-Micro Letters,2024,16(12):P.134-188,55.

基金项目

supported by the National Key R&D Plan of China(Grant 2021YFB3600703) (Grant 2021YFB3600703)

the National Natural Science Foundation(Grant 62204137)of China for Youth,the Open Research Fund Program of Beijing National Research Centre for Information Science and Technology(BR2023KF02009) (Grant 62204137)

the National Natural Science Foundation of china(U20A20168,61874065,and 51861145202) (U20A20168,61874065,and 51861145202)

the Research Fund from Tsinghua University Initiative Scientific Research Program,the Center for Flexible Electronics Technology of Tsinghua University,and a grant from the Guoqiang Institute,Tsinghua University. ()

Nano-Micro Letters

OACSTPCDEI

2311-6706

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