电子科技大学学报2024，Vol.53Issue(5)：685-697,13.DOI:10.12178/1001-0548.2024225
氮化镓基单片功率集成技术
GaN-Based Single-Chip Power Integration Technology
摘要
Abstract
The superior material properties with wide bandgap,large critical electric field,and high saturated electron velocity,in combination with the high density and high mobility two-dimensional electron gas induced at the AlGaN/GaN heterojunction by polarization discontinuity,and thus the related high electron mobility transistors,make GaN devices become new high performance electronic devices for next-generation power and RF applications.The demand for GaN-based power devices with excellent performance in emerging technology such as electric vehicles and AI is rapidly increasing.GaN single-chip power integration technology is the key approach to reduce the influence of parasitic inductance,improve the switching speed of IC,cut down the power consumption and realize the miniaturization for the whole system.Based on GaN single-chip power integration technology,this review paper presents a comprehensive and global overview for the research progress of the reported double-heterojunction based epitaxial structure with p-/n-channels,monolithic heterogeneous integration,All-GaN integrated circuits,and the core technology of p-channel devices.关键词
氮化镓/异质结/二维电子气/高电子迁移率晶体管/氮化镓单片功率集成/p沟道Key words
GaN/heterojunction/2DEG/HEMTs/GaN single-chip power integration/p-channel分类
信息技术与安全科学引用本文复制引用
周靖贵,陈匡黎,周琦,张波..氮化镓基单片功率集成技术[J].电子科技大学学报,2024,53(5):685-697,13.基金项目
国家自然科学基金(62174019) （62174019）
广东省基础与应用基础研究项目(2021B1515140039,2024A1515012139) （2021B1515140039,2024A1515012139）
