1 280×1 024元InAs/GaSb Ⅱ类超晶格中/中波双色红外焦平面探测器OA北大核心CSTPCD
1 280×1 024 dual-color mid-wavelength infrared InAs/GaSb superlattice focal plane arrays
本文报道了1 280×1 024元InAs/GaSb Ⅱ 类超晶格中/中波双色红外焦平面阵列探测器的研究结果.探测器采用PN-NP叠层双色外延结构,信号提取采用叠层双色结构和顺序读出方式.运用分子束外延技术在GaSb 衬底上生长超晶格材料,双波段红外吸收区的超晶格周期结构分别为中波1:6 ML InAs/7 ML GaSb和中波2:9 ML InAs/7 ML GaSb.焦平面阵列像元中心距为12 μm.在80 K 时测试,器件双波段的工作谱段为中波1:3～4 μm,中波2:3.8～5.2 μm.中波1器件平均峰值探测率达到6.32×1011 cm·Hz1/2W-1,中波2器件平均峰值探测率达到2.84×1011 cm·Hz1/2W-1.红外焦平面偏压调节成像测试得到清晰的双波段成像.本文是国内首次报道1 280×1 024规模InAs/GaSb Ⅱ类超晶格中/中波双色红外焦平面探测器.
In this paper,we report research results of 1 280×1 024 dual-color mid-wavelength infrared InAs/GaSb super-lattice focal plane arrays.The detector structure is PN-NP epitaxial multilayer and the signal is read out by sequential mode.The superlattice structure was grown on GaSb substrate using molecular beam epitaxy(MBE)technology.The respective structures of each absorption region are Mid-Wavelength 1(MW1):6 ML(InAs)/7 ML(GaSb)and Mid-Wavelength 2(MW2):9 ML(InAs)/7 ML(GaSb).The pixel center distance of the detector is 12 μm.At 80 K mea-surements,the detector has spectral response wavelength of 3-4 μm and 3.8-5.2 μm respectively.The MW1 detector has a peak detectivity of 6.32×1011 cm·Hz1/2W-1.The MW2 detector has a peak detectivity of 2.84×1011 cm·Hz1/2W-1.In-frared images of both wavebands have been taken using infrared imaging test by adjusting the device voltage bias.It's the first time that a 1 280×1 024 InAs/GaSb Type Ⅱ superlattice mid-wave length two-color infrared focal plane detec-tor has been reported in China.
白治中;黄敏;徐志成;周易;梁钊铭;姚华城;陈洪雷;丁瑞军;陈建新
中国科学院上海技术物理研究所,上海 200083
电子信息工程
焦平面InAs/GaSb超晶格双色
focal plane arrayInAs/GaSbsuperlatticedual-color
《红外与毫米波学报》 2024 (004)
437-441 / 5
国家自然科学基金资助项目(62004205,62104236,62104237,62222412)、国家重点研发计划项目(2022YFB3606800)、上海市启明星培育项目扬帆专项(21YF1455000,22YF1455800)、中国科学院上海技术物理研究所创新专项基金资助项目(CX-455) Supported by the National Natural Science Foundation of China(NSFC)(62004205,62104236,62104237,62222412),National Key Research and Development Program of China(2022YFB3606800),Shanghai Rising-Star Program(21YF1455000,22YF1455800)and Special Fund for Innovation of SITP,CAS(CX-455)
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