基于InAs/GaAsSb超晶格的中红外波导探测器结构设计OA北大核心CSTPCD

In the realm of near-infrared spectroscopy,the detection of molecules has been achieved using on-chip waveguides and resonators.In the mid-infrared band,the integration and sensitivity of chemical sensing chips are often constrained by the reliance on off-chip light sources and detectors.In this study,we demonstrate an InAs/GaAsSb superlattice mid-infrared waveguide integrated detector.The GaAsSb waveguide layer and the InAs/GaAsSb superlattice absorbing layer are connected through evanescent coupling,facilitating efficient and high-quality detection of mid-infrared light with minimal loss.We conducted a simulation to analyze the photoelectric characteristics of the device.Additionally,we investigated the factors that affect the integration of the InAs/GaAs-Sb superlattice photodetector and the GaAsSb waveguide.Optimal thicknesses and lengths for the absorption lay-er are determined.When the absorption layer has a thickness of 0.3 μm and a length of 50 μm,the noise equiva-lent power reaches its minimum value,and the quantum efficiency can achieve a value of 68.9%.The utilization of waveguide detectors constructed with Ⅲ-Ⅴ materials offers a more convenient means of integrating mid-infra-red light sources and achieving photoelectric detection chips.