红外与毫米波学报2024，Vol.43Issue(4)：464-471,8.DOI:10.11972/j.issn.1001-9014.2024.04.005
宽波段响应硅雪崩光电探测器研究
Research on silicon avalanche photodetector with wideband response
摘要
Abstract
Based on the current application requirements for wideband response photodetectors,we designed a novel silicon avalanche photodetector(Si APD)with high response in a broad spectral range of 250-1 100 nm and it could achieve efficient detection of ultraviolet,visible and near-infrared light without splicing.The enhancement of silicon on ultraviolet and infrared bands was separately analyzed.This was followed by simulation on the device structure de-signs using different methods such as back incidence,to improve short wavelength absorption while maintaining a high infrared absorption.The Si APD shows a peak wavelength at around 940 nm and a high photoresponse at 250 nm and 1 100 nm which exceeds 15%of the peak responsivity.This type of device is suitable for multispectral applications and future high-precision detection.关键词
硅雪崩光电探测器/宽波段响应探测器/紫外增强/近红外增强Key words
silicon avalanche photodetector/wideband response/ultraviolet enhancement/near-infrared enhancement分类
信息技术与安全科学引用本文复制引用
彭红玲,卫家奇,宋春旭,王天财,曹澎,陈剑,邓杰,ZHUANG Qian-Dong,郑婉华..宽波段响应硅雪崩光电探测器研究[J].红外与毫米波学报,2024,43(4):464-471,8.基金项目
国家重点研发计划(2018YFE0200900) Supported by the State Key Development Program for Basic Research of China(2018YFE0200900) （2018YFE0200900）
