红外与毫米波学报2024，Vol.43Issue(4)：472-478,7.DOI:10.11972/j.issn.1001-9014.2024.04.006
PBn单极势垒型InAsSb光电探测器p型掺杂研究
Investigation on p-type doping of PBn unipolar barrier InAsSb photodetectors
摘要
Abstract
The lattice-matched XBn structures of InAsSb,grown on GaSb substrates,exhibit high crystal quali-ty,and can achieve extremely low dark currents at high operating temperatures(HOT).Its superior performance is attributed to the unipolar barrier,which blocks the majority carriers while allowing unhindered hole transport.To further explore the energy band and carrier transport mechanisms of the XBn unipolar barrier structure,this pa-per systematically investigates the influence of doping on the dark current,photocurrent,and tunneling character-istics of InAsSb photodetectors in the PBn structure.Three high-quality InAsSb samples with unintentionally doped absorption layers(AL)were prepared,with varying p-type doping concentrations in the GaSb contact layer(CL)and the AlAsSb barrier layer(BL).As the p-type doping concentration in the CL increased,the device's turn-on bias voltage also increased,and p-type doping in the BL led to tunneling occurring at lower bias voltages.For the sample with UID BL,which exhibited an extremely low dark current of 5×10-6 A/cm2.The photocurrent characteristics were well-fitted using the back-to-back diode model,revealing the presence of two opposing space charge regions on either side of the BL.关键词
铟砷锑/PBn/p型掺杂/暗电流Key words
InAsSb/PBn/p-type doping/dark current分类
数理科学引用本文复制引用
张健,戴欣冉,邓功荣,孔金丞,赵鹏,赵俊,常超,李红福,石玉娜,殷瀚翔,李艳辉,岳彪,王海澎,闫常善..PBn单极势垒型InAsSb光电探测器p型掺杂研究[J].红外与毫米波学报,2024,43(4):472-478,7.基金项目
Supported by the Candidate Talents Training Fund of Yunnan Province(202205AC160054) （202205AC160054）
the National Natural Science Foundation of China(62174156) （62174156）
