红外与毫米波学报2024，Vol.43Issue(4)：526-532,7.DOI:10.11972/j.issn.1001-9014.2024.04.012
侧栅晶体管太赫兹探测器的物理模型、结构制备与直流测试
The physical model,structural fabrication,and DC testing of lateral gate transistor terahertz detectors
摘要
Abstract
For the high-electron-mobility transistor(HEMT)terahertz detector with a side-gate structure,a physical model for DC transport and terahertz detection of the device was constructed.Using a self-alignment process,well-shaped and reliable contacts for the side-gate structure were successfully fabricated,effectively solving contact issues be-tween the dual gates and the mesa.Ultimately,terahertz detectors with different gate widths(200 nm,800 nm,and 1400 nm)of side-gate GaN/AlGaN HEMTs were obtained.DC tests revealed a clear linear relationship between the gate widths of different devices and their threshold voltages,confirming the DC transport model of the side-gate HEMT terahertz detector.These results provide experimental verification and guidance for the theoretical model of the complete side-gate HEMT terahertz detector,offering significant support for the development of side-gate HEMT terahertz detec-tors.关键词
氮化镓/太赫兹探测器/侧栅/高电子迁移率晶体管Key words
GaN-based/terahertz detector/lateral gate/high electron mobility transistors分类
信息技术与安全科学引用本文复制引用
康亚茹,董慧,刘晶,黄镇,李兆峰,颜伟,王晓东..侧栅晶体管太赫兹探测器的物理模型、结构制备与直流测试[J].红外与毫米波学报,2024,43(4):526-532,7.基金项目
国家自然科学基金(61971395) Supported by the National Natural Science Foundation of China(61971395) （61971395）
