32×32Si盖革模式激光焦平面探测器OA北大核心CSTPCD
32×32 Si Geiger-mode laser focal plane detector
为了满足350 nm~1100 nm波长范围内远距离及微弱激光3 维成像探测的需求,提出了一种规模为 32×32的盖革模式硅激光焦平面阵列探测器,它主要由硅雪崩光电二极管阵列、读出电路芯片、微透镜阵列、半导体制冷器、引脚网格阵列壳体等元件组成.硅雪崩光电二极管焦平面阵列采用拉通型N+-Π1-P--Π2-P+结构,工作在盖革模式下,通过Si片背面抛磨减薄及盲孔刻蚀技术,实现了纤薄光敏区的加工;读出电路采用主动模式淬灭设计,使电路单元的死时间控制在50 ns以内,并利用一种带相移技术的时间数字转换电路优化方案,在满足时间分辨率不大于 2ns的同时,降低了读出电路芯片的功耗.结果表明,在反向过偏电压14 V、工作温度-40℃的条件下,该探测器在 850 nm的目标波长可实现20.7%的平均光子探测效率与0.59 kHz的平均暗计数率,时间分辨率为 1 ns,有效像元率优于 97%.该研究为纤薄型背进光Si基激光焦平面探测器的研制提供了参考.
A 32×32 Geiger-mode silicon laser focal plane array detector was developed for the long-distance or weak-laser detection of the 3-D imaging system using the wavelength in range of 350 nm~1100 nm.This detector is mainly composed of silicon avalanche photodiode array,readout circuit chips,microlens arrays,semiconductor refrigerators,and pin-grid array shells.The silicon avalanche photodiode focal plane arrays,adopts the structure of pull through N+-Π1-P--Π2-P+and works at the Geiger mode.The processing of thin photosensitive areas has been achieved through Si wafer back polishing and blind hole etching technology.An active-quenching-mode design was adopted to control the dead time of the circuit unit within 50 ns.An optimized time-to-digital converter circuit scheme with phase shift technology was used to achieve a time resolution within 2 ns while reducing the power consumption of the readout circuit chip.The results show that under the conditions of reverse bias voltage of 14 V and operating temperature of-40℃,the detector can achieve an average photon detection efficiency of 20.7%and an average dark counting rate of 0.59 kHz at the target wavelength of 850 nm,with a time resolution of 1 ns and an effective pixel rate better than 97%.This study provides a reference for the development of thin-type back-illuminated silicon-based laser focal plane detectors.
王江;王鸥;刘向东;袁利;柯尊贵;郝昕;覃文治;杨赟秀
西南技术物理研究所,成都 610041,中国中国航天科技集团有限公司 第五研究院 第五○二研究所,北京 100035,中国
电子信息工程
传感器技术雪崩焦平面探测器盖革模式硅激光3 维成像
sensor techniqueavalanche focal plane detectorGeiger-modesiliconlaser 3-D imaging
《激光技术》 2024 (005)
665-670 / 6
国家重点研发计划资助项目(2021YFB3203101)
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