量子电子学报2024，Vol.41Issue(5)：813-821,9.DOI:10.3969/j.issn.1007-5461.2024.05.011
纳秒脉冲激光制备黑硅及其光学性能的研究
Preparation of black silicon by nanosecond pulsed laser and its optical properties
摘要
Abstract
A nanosecond pulse laser was used to scan and etch single crystal silicon in room temperature and atmospheric pressure environment in this work,and various black silicon samples with different structure were prepared by changing the scanning mode and scanning line spacing.Then the effects of scanning mode,scanning interval and high temperature oxygen blowing annealing time on the photoluminescence(PL)properties of black silicon were studied,as well as the effect of different microstructure of silicon surface on light absorption rate.The morphology,light absorption and PL characteristics of the prepared black silicon samples were detected and characterized using transmission electron microscopy,scanning electron microscopy,optical microscopy,Raman and fluorescence spectroscopy,absorption spectroscopy,etc.,and black silicon structure samples with an absorption rate higher than 90%were obtained.It is found that the PL spectrum of black silicon samples prepared by linear scanning is mainly distributed in the red band,while the PL spectrum of black silicon samples prepared by orthogonal scanning has a stable emission peak near 900 nm.In addition,the eletron localized luminescence near 630 nm was observed on the black silicon sample,and its luminescence mechanism was explained by establishing a corresponding physical model.关键词
激光技术/黑硅/吹氧退火/光致发光谱/反射谱/局域态发光Key words
laser techniques/black silicon/oxygen blowing annealing/photoluminescence spectrum/reflection spectrum/localized luminescence分类
数理科学引用本文复制引用
王可,刘世荣,王梓霖,周晓雨,黄伟其,张铁民,彭鸿雁,王安琛,张茜,黄忠梅..纳秒脉冲激光制备黑硅及其光学性能的研究[J].量子电子学报,2024,41(5):813-821,9.基金项目
国家自然科学基金(11847084),贵州省科技计划重点资助项目(黔科合-ZK[2022]重点010) （11847084）
