A位La/Sr共掺杂PbZrO3薄膜的制备及储能特性优化OA北大核心CSTPCD

Antiferroelectric materials have been extensively studied in the field of dielectric energy storage due to their ultra-high power density.Lead zirconate(PbZrO3,PZO),as a prototype of antiferroelectric material,has been one of the most studied antiferroelectric materials,and research on enhancing energy storage performance of PZO-based materials is a hotspot of the current study.In this work,further improvement of the energy storage performance of PZO-based antiferroelectric thin films was realized by further doping small-radius Sr2+into the A-site of the PZO perovskite structure on the basis of La3+-doped PZO.A series of antiferroelectric thin films of A-site La/Sr co-doped Pb0.94-xLa0.04SrxZrO3(Sr-PLZ-x,x=0,0.03,0.06,0.09,0.12)were prepared by Sol-Gel method,and the effects of Sr2+doping on the crystal structure and electrical properties such as ferroelectricity,energy storage,and fatigue properties of Sr-PLZ-x antiferroelectric films were systematically investigated.The results show that with the doping of Sr2+,the lattice constants are gradually reduced,and the saturation polarization of the films is first slightly increased and then maintained,but finally gradually decreased.The tolerance factors of Sr-PLZ-x films are reduced with increasing Sr2+doping content,while the antiferroelectricities of the films are enhanced.Both the switching field and the breakdown strength are increased,resulting in an improved energy storage performance of Sr-PLZ-x films.At x=0.03,the energy storage performance of Sr-PLZ-x antiferroelectric film reaches the highest,with the energy storage density and efficiency are 31.7 J/cm3 and 71％,respectively.Meanwhile,the doping of Sr2+also makes the fatigue characteristics of Sr-PLZ-x antiferroelectric films further improved.The x=0.12 antiferroelectric film exhibits only 3.4％and 2.7％degradation in energy storage density and energy storage efficiency after 107 cycles.In summary,the method of A-site La/Sr co-doping can effectively improve the energy storage performance of PZO-based antiferroelectric films.