无机材料学报2024，Vol.39Issue(9)：1022-1028,7.DOI:10.15541/jim20240087
A位La/Sr共掺杂PbZrO3薄膜的制备及储能特性优化
Preparation and Energy Storage Properties of A-site La/Sr Co-doped PbZrO3 Thin Films
摘要
Abstract
Antiferroelectric materials have been extensively studied in the field of dielectric energy storage due to their ultra-high power density.Lead zirconate(PbZrO3,PZO),as a prototype of antiferroelectric material,has been one of the most studied antiferroelectric materials,and research on enhancing energy storage performance of PZO-based materials is a hotspot of the current study.In this work,further improvement of the energy storage performance of PZO-based antiferroelectric thin films was realized by further doping small-radius Sr2+into the A-site of the PZO perovskite structure on the basis of La3+-doped PZO.A series of antiferroelectric thin films of A-site La/Sr co-doped Pb0.94-xLa0.04SrxZrO3(Sr-PLZ-x,x=0,0.03,0.06,0.09,0.12)were prepared by Sol-Gel method,and the effects of Sr2+doping on the crystal structure and electrical properties such as ferroelectricity,energy storage,and fatigue properties of Sr-PLZ-x antiferroelectric films were systematically investigated.The results show that with the doping of Sr2+,the lattice constants are gradually reduced,and the saturation polarization of the films is first slightly increased and then maintained,but finally gradually decreased.The tolerance factors of Sr-PLZ-x films are reduced with increasing Sr2+doping content,while the antiferroelectricities of the films are enhanced.Both the switching field and the breakdown strength are increased,resulting in an improved energy storage performance of Sr-PLZ-x films.At x=0.03,the energy storage performance of Sr-PLZ-x antiferroelectric film reaches the highest,with the energy storage density and efficiency are 31.7 J/cm3 and 71％,respectively.Meanwhile,the doping of Sr2+also makes the fatigue characteristics of Sr-PLZ-x antiferroelectric films further improved.The x=0.12 antiferroelectric film exhibits only 3.4％and 2.7％degradation in energy storage density and energy storage efficiency after 107 cycles.In summary,the method of A-site La/Sr co-doping can effectively improve the energy storage performance of PZO-based antiferroelectric films.关键词
元素掺杂/锆酸铅/反铁电/储能Key words
elemental doping/lead zirconate/antiferroelectric/energy storage分类
通用工业技术引用本文复制引用
沈浩,陈倩倩,周渤翔,唐晓东,张媛媛..A位La/Sr共掺杂PbZrO3薄膜的制备及储能特性优化[J].无机材料学报,2024,39(9):1022-1028,7.基金项目
重庆市自然科学基金(CSTB2022NSCQ-MSX1474)Natural Science Foundation of Chongqing Municipality(CSTB2022NSCQ-MSX1474) （CSTB2022NSCQ-MSX1474）
