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首页|期刊导航|无机材料学报|基于CuI/Si单边异质结的微光高灵敏双波段可切换光电探测器

基于CuI/Si单边异质结的微光高灵敏双波段可切换光电探测器

杨佳霖 王亮君 阮丝园 蒋秀林 杨长

无机材料学报2024,Vol.39Issue(9):1063-1069,7.
无机材料学报2024,Vol.39Issue(9):1063-1069,7.DOI:10.15541/jim20240094

基于CuI/Si单边异质结的微光高灵敏双波段可切换光电探测器

Highly Weak-light Sensitive and Dual-band Switchable Photodetector Based on CuI/Si Unilateral Heterojunction

杨佳霖 1王亮君 1阮丝园 1蒋秀林 2杨长1

作者信息

  • 1. 华东师范大学 电子系,极化材料与器件教育部重点实验室,上海类脑智能材料与器件研究中心,上海 200241
  • 2. 江苏大学智能柔性机械电子研究院,镇江 212013||晶澳太阳能有限公司 电池研发中心,扬州 225000
  • 折叠

摘要

Abstract

In recent years,copper iodide(Cui)is an emerging p-type wide bandgap semiconductor with high intrinsic Hall mobility,high optical absorption and large exciton binding energy.However,the spectral response and the photoelectric conversion efficiency are limited for Cui-based heterostructure devices,which is related to the difficulty in fabrication of high-quality Cui thin films on other semiconductors.In this study,a p-CuI/n-Si photodiode has been fabricated through a facile solid-phase iodination method.Although the CuI thin film is polycrystalline with obvious structural defects,the CuI/Si diode shows a high weak-light sensitivity and a high rectification ratio of 7.6× 104,indicating a good defect tolerance.This is because of the unilateral heterojunction behavior of the formation of the p n diode.In this work,the mechanism of photocurrent of the p+n diode has been studied comprehensively.Different monochromatic lasers with wavelengths of 400,505,635 and 780 nm have been selected for testing the photoresponse.Under zero-bias voltage,the device is a unilateral heterojunction,and only visible light can be absorbed at the Si side.On the other hand,when a bias voltage of-3 V is applied,the photodiode is switched to a broader"UV-visible"band response mode.Therefore,the detection wavelength range can be switched between the"Visible"and"UV-visible"bands by adjusting the bias voltage.Moreover,the obtained CuI/Si diode was very sensitive to weak light illumination.A very high detectivity of 1013-1014 Jones can be achieved with a power density as low as 0.5 μW/cm2,which is significantly higher than that of other Cu-based diodes.These findings underscore the high application potential of CuI when integrated with the traditional Si industry.

关键词

碘化铜/异质结/光电探测器

Key words

copper iodide/heterojunction/photodetector

分类

化学化工

引用本文复制引用

杨佳霖,王亮君,阮丝园,蒋秀林,杨长..基于CuI/Si单边异质结的微光高灵敏双波段可切换光电探测器[J].无机材料学报,2024,39(9):1063-1069,7.

基金项目

National Natural Science Foundation of China(62074056) (62074056)

Fundamental Research Funds for the Central Universities ()

无机材料学报

OA北大核心CSTPCD

1000-324X

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