无机材料学报2024，Vol.39Issue(9)：1070-1076,7.DOI:10.15541/jim20240136
非本征背照触发平面型4H-SiC光导开关性能研究
Performance of Lateral 4H-SiC Photoconductive Semiconductor Switches by Extrinsic Backside Trigger
摘要
Abstract
Photoconductive semiconductor switch(PCSS)can be applied in pulsed high power systems and microwave techniques.However,reducing the damage and increasing the lifetime of silicon carbide(SiC)PCSS are still faced severe challenges.In this study,PCSSs with various structures were prepared on 4-inch diameter,500 μm thick high-purity semi-insulating 4H-SiC substrates and their on-state resistance and damage mechanisms were investigated.It was found that the PCSS of an Au/TiW/Ni electrode system annealed at 950 ℃ had a minimum on-state resistance of 6.0 Ω at 1 kV bias voltage with a 532 nm and 170 mJ pulsed laser by backside illumination single trigger.The backside illumination single trigger could reduce on-state resistance and alleviate the damage of PCSS compared to the frontside trigger when the diameter of the laser spot was larger than the channel length of PCSS.For the 200 s trigger test by a 10 Hz laser,the black branch-like ablation on Au/TiW/Ni PCSS was mainly caused by thermal stress owing to hot carriers.Replacing metal Ni with boron gallium co-doped zinc oxide(BGZO)thin films annealed at 400 ℃,black branch-like ablation was alleviated while concentric arc damage was obvious at the anode.The major causes of concentric arc are both pulsed laser diffraction and thermal effect.关键词
碳化硅/光导开关/导通电阻/失效分析Key words
silicon carbide/photoconductive semiconductor switch/on-state resistance/failure analysis分类
信息技术与安全科学引用本文复制引用
王浩,郭辉,高攀,刘学超,郑重,潘秀红,徐锦涛,朱新锋,陈锟,邓伟杰,汤美波..非本征背照触发平面型4H-SiC光导开关性能研究[J].无机材料学报,2024,39(9):1070-1076,7.基金项目
National Key R&D Program of China(2021YFA0716304) （2021YFA0716304）
Shanghai Science and Technology Programs(22511100300,23DZ2201500) （22511100300,23DZ2201500）
