首页|期刊导航|Journal of Semiconductors|A magic organic molecule assembled capping layer enables airprocessed α-FAPbI_(3) perovskite solar cell with state-of-the-art performances

A magic organic molecule assembled capping layer enables airprocessed α-FAPbI_(3) perovskite solar cell with state-of-the-art performances

Yulong Wang Xiuwen Xu Shujuan Liu Qiang Zhao

Journal of Semiconductors2024，Vol.45Issue(10)：P.3-6,4.

Journal of Semiconductors2024，Vol.45Issue(10)：P.3-6,4.DOI:10.1088/1674-4926/24070017

A magic organic molecule assembled capping layer enables airprocessed α-FAPbI_(3) perovskite solar cell with state-of-the-art performances

Yulong Wang ¹Xiuwen Xu ²Shujuan Liu ³Qiang Zhao¹

作者信息

1. College of Electronic and Optical Engineering and College of Flexible Electronics(Future Technology),Nanjing University of Posts and Telecommunications,Nanjing 210023,China State Key Laboratory of Organic Electronics and Information Displays&Jiangsu Key Laboratory for Biosensors,Institute of Advanced Materials,Nanjing University of Posts and Telecommunications,Nanjing 210023,China
2. College of Electronic and Optical Engineering and College of Flexible Electronics(Future Technology),Nanjing University of Posts and Telecommunications,Nanjing 210023,China
3. State Key Laboratory of Organic Electronics and Information Displays&Jiangsu Key Laboratory for Biosensors,Institute of Advanced Materials,Nanjing University of Posts and Telecommunications,Nanjing 210023,China
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摘要

关键词

perovskite/crystallization/enable

分类

信息技术与安全科学

引用本文复制引用

Yulong Wang,Xiuwen Xu,Shujuan Liu,Qiang Zhao..A magic organic molecule assembled capping layer enables airprocessed α-FAPbI_(3) perovskite solar cell with state-of-the-art performances[J].Journal of Semiconductors,2024,45(10):P.3-6,4.

基金项目

support from the National Natural Science Foundation of China(Grant Nos.62205154 and 62288102) （Grant Nos.62205154 and 62288102）

the Natural Science Research Start-up Foundation of Recruiting Talents of Nanjing University of Posts and Telecommunications(Grant No.NY221112). （Grant No.NY221112）

Journal of Semiconductors

OACSTPCDEI

ISSN：1674-4926

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