首页|期刊导航|Journal of Semiconductors|Heterojunction-engineered carrier transport in elevated-metal metal-oxide thin-film transistors

Heterojunction-engineered carrier transport in elevated-metal metal-oxide thin-film transistors

Xiao Li Zhikang Ma Jinxiong Li Wengao Pan Congwei Liao Shengdong Zhang Zhuo Gao Dong Fu Lei Lu

Journal of Semiconductors2024，Vol.45Issue(10)：P.54-59,6.

Journal of Semiconductors2024，Vol.45Issue(10)：P.54-59,6.DOI:10.1088/1674-4926/24040016

Heterojunction-engineered carrier transport in elevated-metal metal-oxide thin-film transistors

Xiao Li ¹Zhikang Ma ¹Jinxiong Li ¹Wengao Pan ¹Congwei Liao ¹Shengdong Zhang ¹Zhuo Gao ²Dong Fu ²Lei Lu¹

作者信息

1. School of Electronic and Computer Engineering,Peking University,Shenzhen 518055,China
2. Guangdong Juhua Printed Display Technology Company Limited,Guangzhou 510700,China
折叠

摘要

关键词

oxide semiconductor/thin-film transistors/two-dimensional electron gas/heterojunction/high mobility

分类

信息技术与安全科学

引用本文复制引用

Xiao Li,Zhikang Ma,Jinxiong Li,Wengao Pan,Congwei Liao,Shengdong Zhang,Zhuo Gao,Dong Fu,Lei Lu..Heterojunction-engineered carrier transport in elevated-metal metal-oxide thin-film transistors[J].Journal of Semiconductors,2024,45(10):P.54-59,6.

基金项目

supported by National Key Research and Development Program(2021YFB3600802) （2021YFB3600802）

Shenzhen Municipal Scientific Program(JSGG20220831103803007,SGDX20211123145404006) （JSGG20220831103803007,SGDX20211123145404006）

Guangdong Basic and Applied Basic Research Foundation(2022A1515110029) （2022A1515110029）

implemented in the Guangdong Technology Center for Oxide Semiconductor Devices and ICs,Guangdong Provincial Key Laboratory of In-Memory Computing Chips,and Shenzhen POC Center of Flexible Electronics. （）

Journal of Semiconductors

OACSTPCDEI

ISSN：1674-4926

访问量0

下载量0

段落导航