Heterojunction-engineered carrier transport in elevated-metal metal-oxide thin-film transistorsOACSTPCDEI
This study investigates the carrier transport of heterojunction channel in oxide semiconductor thin-film transistor(TFT)using the elevated-metal metal-oxide(EMMO)architecture and indium−zinc oxide(InZnO).The heterojunction ba…查看全部>>
Xiao Li;Zhikang Ma;Jinxiong Li;Wengao Pan;Congwei Liao;Shengdong Zhang;Zhuo Gao;Dong Fu;Lei Lu
School of Electronic and Computer Engineering,Peking University,Shenzhen 518055,ChinaSchool of Electronic and Computer Engineering,Peking University,Shenzhen 518055,ChinaSchool of Electronic and Computer Engineering,Peking University,Shenzhen 518055,ChinaSchool of Electronic and Computer Engineering,Peking University,Shenzhen 518055,ChinaSchool of Electronic and Computer Engineering,Peking University,Shenzhen 518055,ChinaSchool of Electronic and Computer Engineering,Peking University,Shenzhen 518055,ChinaGuangdong Juhua Printed Display Technology Company Limited,Guangzhou 510700,ChinaGuangdong Juhua Printed Display Technology Company Limited,Guangzhou 510700,ChinaSchool of Electronic and Computer Engineering,Peking University,Shenzhen 518055,China
电子信息工程
oxide semiconductorthin-film transistorstwo-dimensional electron gasheterojunctionhigh mobility
《Journal of Semiconductors》 2024 (10)
P.54-59,6
supported by National Key Research and Development Program(2021YFB3600802)Shenzhen Municipal Scientific Program(JSGG20220831103803007,SGDX20211123145404006)Guangdong Basic and Applied Basic Research Foundation(2022A1515110029)implemented in the Guangdong Technology Center for Oxide Semiconductor Devices and ICs,Guangdong Provincial Key Laboratory of In-Memory Computing Chips,and Shenzhen POC Center of Flexible Electronics.
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