The surface electron transfer strategy promotes the hole of PDI release and enhances emerging organic pollutant degradationOACSTPCDEI
In semiconductor photocatalysts,the easy recombination of photogenerated carriers seriously affects the application of photocatalytic materials in water treatment.To solve the serious problem of electron−hole pair recombination in perylene diimide(PDI)organic semiconductors,we loaded ferric hydroxyl oxide(FeOOH)on PDI materials,successfully prepared novel FeOOH@PDI photocatalytic materials,and constructed a photo-Fenton system.The system was able to achieve highly efficient degradation of BPA under visible light,with a degradation rate of 0.112 min^(−1)that was 20 times higher than the PDI system,and it also showed universal degradation performances for a variety of emerging organic pollutants and anti-interference ability.The mechanism research revealed that the FeOOH has the electron trapping property,which can capture the photogenerated electrons on the surface of PDI,effectively reducing the compounding rate of photogenerated carriers of PDI and accelerating the iron cycling and H2O2 activation on the surface of FeOOH at the same time.This work provides new insights and methods for solving the problem of easy recombination of carriers in semiconductor photocatalysts and degrading emerging organic pollutants.
Yunchuan Yang;Dongyu Wang;Jisheng Geng;Jun Liu;Jun Wang;
State Key Laboratory of Environmental−Friendly Energy Materials,School of Materials and Chemistry,Southwest University of Science and Technology,Mianyang 621010,China Tianfu Institute of Research and Innovation,Southwest University of Science and Technology,Chengdu 610213,ChinaGuangdong−Hong Kong Joint Laboratory for Water Security,Center for Water Research,Advanced Institute of Natural Sciences,Beijing Normal University at Zhuhai,Zhuhai 519087,China
环境科学
perylene diimide organic semiconductorsemerging pollutantssurface electron transfer strategyphoto-Fenton
《Journal of Semiconductors》 2024 (010)
P.84-91 / 8
supported by the National Natural Science Foundation of China(No.22306178 and 22176155);Outstanding Youth Talents of Sichuan Science and Technology Program(No.22JCQN0061);National Natural Science Foundation of China(No.22306012);Guangdong Basic and Applied Basic Research Foundation(No.2022A1515110578).
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