Journal of Semiconductors2024，Vol.45Issue(10)：P.35-41,7.DOI:10.1088/1674-4926/24030002
Impact of strain relaxation on the growth rate of heteroepitaxial germanium tin binary alloy
Pedram Jahandar 1Maksym Myronov1
作者信息
- 1. Department of Physics,University of Warwick,Coventry,CV47AL,United Kingdom
- 折叠
摘要
关键词
GeSn/germanium tin/strain relaxation/groupⅣsemiconductor/chemical vapour deposition/CVD分类
信息技术与安全科学引用本文复制引用
Pedram Jahandar,Maksym Myronov..Impact of strain relaxation on the growth rate of heteroepitaxial germanium tin binary alloy[J].Journal of Semiconductors,2024,45(10):P.35-41,7.
