China Foundry2024，Vol.21Issue(5)：P.491-506,16.DOI:10.1007/s41230-024-4131-5
Growth process,defects,and dopants of bulk β-Ga_(2)O_(3) semiconductor single crystals
Yan-shen Wang 1Ming-zhi Zhu 1Yuan Liu1
作者信息
- 1. School of Materials Science and Engineering,Tsinghua University,Beijing 100084,China Key Laboratory for Advanced Materials Processing Technology(Ministry of Education),Beijing 100084,China
- 折叠
摘要
关键词
β-Ga_(2)O_(3)/single-crystal growth/defects/dopants/semiconductor分类
数理科学引用本文复制引用
Yan-shen Wang,Ming-zhi Zhu,Yuan Liu..Growth process,defects,and dopants of bulk β-Ga_(2)O_(3) semiconductor single crystals[J].China Foundry,2024,21(5):P.491-506,16.
