Growth process,defects,and dopants of bulk β-Ga_(2)O_(3) semiconductor single crystalsOACSTPCDEI
β-gallium oxide(β-Ga2O3),as the typical representative of the fourth generation of semiconductors,has attracted increasing attention owing to its ultra-wide bandgap,superior optical properties,and excellent tolerance to high …查看全部>>
Yan-shen Wang;Ming-zhi Zhu;Yuan Liu
School of Materials Science and Engineering,Tsinghua University,Beijing 100084,China Key Laboratory for Advanced Materials Processing Technology(Ministry of Education),Beijing 100084,ChinaSchool of Materials Science and Engineering,Tsinghua University,Beijing 100084,China Key Laboratory for Advanced Materials Processing Technology(Ministry of Education),Beijing 100084,ChinaSchool of Materials Science and Engineering,Tsinghua University,Beijing 100084,China Key Laboratory for Advanced Materials Processing Technology(Ministry of Education),Beijing 100084,China
β-Ga_(2)O_(3)single-crystal growthdefectsdopantssemiconductor
《China Foundry》 2024 (5)
P.491-506,16
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