红外技术2024，Vol.46Issue(10)：1172-1177,6.
100mm×100mm液相外延碲镉汞薄膜技术进展
Progress in LPE Growth of HgCdTe Film at 100mm×100mm
邓文斌 1许江明 1杨翔 1朱逊 1郑要争 1姬荣斌 1宋林伟 1孔金丞 1姜军 1杨晋 1起文斌 1万志远 1刘燕 1荣徽宇1
作者信息
- 1. 昆明物理研究所,云南 昆明 650223
- 折叠
摘要
Abstract
The Kunming Institute of Physics has achieved significant advancements in the directional growth technology of φ150 mm cadmium zinc telluride(CZT)single crystals,thus enabling the small-scale production of 100 mm×100 mm CZT substrates.The dislocation etch pit density(EPD)is≤4×104cm-2,with precipitate dimensions of<5 μm and a density of<5×103cm-2.In addition,100 mm×100 mm large-area mercury cadium telluride(MCT)thin films were successfully prepared via the surface treatment of large-sized CZT substrates and tellurium-rich horizontal sliding-boat liquid-phase epitaxy.These films exhibit excellent surface quality,with thickness variation within±1.25μm and compositional variation better than±0.0031.This achievement represents the largest area of CZT-based MCT thin films reported internationally and therefore provides a solid foundation for the development of 10 k×10k or larger-scale infrared detectors and the mass production of 4 k×4k scale infrared detector products.关键词
液相外延/100mm×100mm/碲锌镉/碲镉汞Key words
liquid phase epitaxy(LPE)/100mm×100mm/CdZnTe/HgCdTe分类
电子信息工程引用本文复制引用
邓文斌,许江明,杨翔,朱逊,郑要争,姬荣斌,宋林伟,孔金丞,姜军,杨晋,起文斌,万志远,刘燕,荣徽宇..100mm×100mm液相外延碲镉汞薄膜技术进展[J].红外技术,2024,46(10):1172-1177,6.
