红外技术2024，Vol.46Issue(10)：1186-1191,6.
高亮绿光氮化镓基Micro-LED微型显示器制备
Fabrication of GaN-based Micro-LED Green Micro-display with High Brightness
摘要
Abstract
Micro-LEDs are a new display technology with advantages including high contrast,fast response,and long lifetimes.Micro-LEDs are currently regarded as an active topic of research.Micro-LED display technology is a promising industry,but its commercialization faces many technical challenges and bottlenecks.This study explores the diode preparation process and related technologies for high-brightness,green-light,GaN-based micro-LED micro-displays.Monochrome green micro-LEDs with resolutions of 800×480 and 0.41 in were fabricated based on the CMOS driver circuit of an all-digital signal circuit.The CMOS driver circuit was connected to an LED chip via high-precision flip bonding.The experimental results showed that the turn-on voltage of the LED was 2.8 V and that the peak wavelength of the electroluminescence spectrum was 524 nm.The maximum brightness of the device can reach 250,000 cd/m2 within the normal driving range of silicon-based CMOS circuits,and the brightness can reach 108,000 cd/m2 at 5 V.When the current density was controlled at 0.61 A/cm2,the CIE coordinates were(0.175,0.756).When the current density was increased from 0.3 A/cm2 to 1.3 A/cm2,the CIE coordinates changed from(0.178,0.757)to(0.175,0.746).The color stability of the device met the requirements for practical applications.关键词
micro-LED/微型显示器/高亮单色绿光发光二级管Key words
micro-LED/micro-display/high brightness green emitting diode分类
电子信息工程引用本文复制引用
张杰,曹坤宇,马赛江,刘颖琪,王丽琼,王光华,邓枫,杨文运,高思博,鲁朝宇,孟泽阳,高树雄,常诚..高亮绿光氮化镓基Micro-LED微型显示器制备[J].红外技术,2024,46(10):1186-1191,6.基金项目
云南省省市一体化重大科技专项(202202AH210001)、云南省院士专家工作站(202205AF150076). （202202AH210001）
