物理学报2024，Vol.73Issue(19)：140-148,9.DOI:10.7498/aps.73.20240611
硒化温度对MoSe2薄膜结构和光学带隙的影响
Influence of selenization temperature on structure and optical band gap of MoSe2 thin film
摘要
Abstract
In recent years,MoSe2,as a kind of transition metal dichalcogenide,has aroused widespread research interest due to its special crystal structure with different electrical and optical properties.The band gap of molybdenum diselenide can be manipulated by different layers,strain engineering,doping,or the formation of heterostructures,which makes it potential advantages in optoelectronic devices and photovoltaic applications.In this work,we investigate the influence of selenization temperature on the structures and optical properties of the MoSe2 films.Molybdenum(Mo)thin films are prepared by RF magnetron sputtering,and then MoSe2 thin films are generated by selenization annealing.The surface morphology,crystal structure,and optical bandgap for each of the MoSe2 thin films are characterized and analyzed by using scanning electron microscopy,X-ray diffraction,and ultraviolet visible spectroscopy,respectively.The results show that the crystal structures of the MoSe2 thin films are closely related to the selenization temperature(Ts):with the increase of selenization temperature,the average grain size in the thin film decreases slightly and then increases rapidly from 24.82 nm to 55.76 nm.Meanwhile,the(002)crystal plane of MoSe2 also exhibits preferential growth with temperature increasing.Each MoSe2 thin film has a low absorption rate for short-wavelength light(around 600 nm).With the increase of selenization temperature,the bandgap waves of the MoSe2 thin films are blue-shifted,and the optical bandgaps decrease,which is attributed to the fact that different selenization temperatures cause the lattice size of MoSe2 to change,thereby affecting the spatial expansion of its electronic wave function.In addition,the structure and optical bandgap of MoSe2 can be effectively controlled by changing the selenization temperature,which provides more possibilities for the applications of the MoSe2 thin films in optical devices.关键词
MoSe2薄膜/硒化温度/磁控溅射/薄膜结构/光学带隙Key words
MoSe2 thin film/selenization temperature/magnetron sputtering/thin film structure/optical bandgap引用本文复制引用
吴诗漫,陶思敏,吉爱闯,管绍杭,肖剑荣..硒化温度对MoSe2薄膜结构和光学带隙的影响[J].物理学报,2024,73(19):140-148,9.基金项目
国家自然科学基金(批准号:12064006)资助的课题. （批准号:12064006）
