中国电机工程学报2024，Vol.44Issue(19)：7772-7783,中插24,13.DOI:10.13334/j.0258-8013.pcsee.230216
SiC MOSFET开关瞬态解析建模综述
Overview of Switching Transient Analytical Modeling of SiC MOSFET
摘要
Abstract
In the field of evaluating and optimizing the switching transient characteristics of semiconductor devices,analytical models have been widely studied for their simplicity,intuitiveness,and ease of application.Compared with silicon-based power devices of the same power level,higher switching speeds of silicon carbide(SiC)metal-oxide-semiconductor field effect transistors(MOSFETs)lead to more complex switching transient characteristics,and the analytical modeling of their switching transient processes is more difficult.This paper summarizes the existing analytical transient models for SiC MOSFET and diode commutation pair.Various simplification assumptions are introduced successively in the modeling process,and the gradual simplification process of the analytical model is organized in an order that corresponds to the degree of simplification from low to high.By comparison,the advantages and disadvantages of each model as well as its applications are evaluated,and the piecewise linear model is introduced in detail.After that,the modeling methods of key parameters in switching transient modeling are summarized and evaluated.Finally,the existing problems in the switching transient analytical models of SiC MOSFET are pointed out,and suggestions for its future development are given.关键词
碳化硅金属氧化物半导体场效应晶体管/开关瞬态/解析建模/跨导/寄生电容Key words
silicon carbide metal-oxide-semiconductor field effect transistors(SiC MOSFET)/switching transient/analytical modeling/transconductance/parasitic capacitance分类
信息技术与安全科学引用本文复制引用
王莉娜,袁泽卓,常峻铭,武在洽..SiC MOSFET开关瞬态解析建模综述[J].中国电机工程学报,2024,44(19):7772-7783,中插24,13.基金项目
国家自然科学基金项目(52177167,51877005) （52177167,51877005）
航空科学基金(2019ZC051012). Project Supported by National Natural Science Foundation of China(52177167,51877005) （2019ZC051012）
Aeronautical Science Foundation of China(2019ZC051012). （2019ZC051012）
