Highly Sensitive Photodetectors Based on WS_(2)Quantum Dots/GaAs HeterostructuresOA北大核心CSTPCD
The performance of the photodetector is significantly impacted by the inherent surface faults in GaAs nanowires(NWs).We combined three-dimensional(3D)gallium arsenide nanowires with zero-dimensional(0D)WS_(2)quantum dot(QDs)materials in a simple and convenient way to form a heterogeneous structure.Various performance enhancements have been realized through the formation of typeⅡenergy bands in heterostructures,opening up new research directions for the future development of photodetector devices.This work successfully fabricated a high-sensitivity photodetector based on WS_(2)QDs/GaAs NWs heterostructure.Under 660 nm laser excitation,the photodetector exhibits a responsivity of 368.07 A/W,a detectivity of 2.7×10^(12)Jones,an external quantum efficiency of 6.47×10^(2)%,a low-noise equivalent power of 2.27×10^(-17)W·Hz-1/2,a response time of 0.3 s,and a recovery time of 2.12 s.This study provides a new solution for the preparation of high-performance GaAs detectors and promotes the development of optoelectronic devices for GaAs NWs.
LI Xianshuai;LIN Fengyuan;HOU Xiaobing;LI Kexue;LIAO Lei;HAO Qun;WEI Zhipeng;
State Key Laboratory of High Power Semiconductor Lasers,College of Physics,Changchun University of Science and Technology,Changchun 130022,ChinaState Key Laboratory for Chemo/Biosensing and Chemometrics,School of Physics and Electronics,Hunan University,Changsha 410082,ChinaState Key Laboratory of High Power Semiconductor Lasers,College of Physics,Changchun University of Science and Technology,Changchun 130022,China School of Optoelectronics,Beijing Institute of Technology,Beijing 100081,China
电子信息工程
GaAs nanowiresWS_(2)quantum dotsphotodetectorstype-Ⅱenergy band structure
《发光学报》 2024 (010)
P.1699-1706 / 8
国家自然科学基金(12074045,62027820);吉林省自然科学基金(20210101408JC,20230101352JC);中国“111”项目(D17017)。
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