发光学报2024，Vol.45Issue(10)：P.1639-1646,8.DOI:10.37188/CJL.20240199
Optical Properties of GaAs/AlGaAs Nanowires Grown on Pre-etched Si Substrates
ZHANG Zhihong 1MENG Bingheng 2WANG Shuangpeng 3KANG Yubin 4WEI Zhipeng2
作者信息
- 1. State Key Laboratory of High Power Semiconductor Lasers,Changchun University of Science and Technology,Changchun 130022,China Instituted of Applied Physics and Materials Engineering,University of Macao,Macao 999078,China
- 2. State Key Laboratory of High Power Semiconductor Lasers,Changchun University of Science and Technology,Changchun 130022,China
- 3. Instituted of Applied Physics and Materials Engineering,University of Macao,Macao 999078,China
- 4. College of Optics and Electronic Science and Technology,China Jiliang University,Hangzhou 310018,China
- 折叠
摘要
关键词
GaAs nanowires/GaAs/AlGaAs core-shell structure/crystal phase/optical property分类
数理科学引用本文复制引用
ZHANG Zhihong,MENG Bingheng,WANG Shuangpeng,KANG Yubin,WEI Zhipeng..Optical Properties of GaAs/AlGaAs Nanowires Grown on Pre-etched Si Substrates[J].发光学报,2024,45(10):P.1639-1646,8.基金项目
国家自然科学基金(12074045,62027820,61904017) （12074045,62027820,61904017）
吉林省自然科学基金(20230101352JC) （20230101352JC）
中国“111”项目(D17017)。 （D17017）
