集成电路与嵌入式系统2024，Vol.24Issue(10)：1-8,8.DOI:10.20193/j.ices2097-4191.2024.0035
电场调控增强型背照式单光子雪崩二极管
Field-controlled enhancement backside-illuminated single photon avalanche diode
摘要
Abstract
This study developed a Field-Controlled Enhancement Backside-Illuminated Single-Photon Avalanche Diode(SPAD)device u-sing a simulation design platform.By adjusting the electric field in the avalanche region of the backside-illuminated SPAD,the photon detection efficiency was further improved,and the dark count rate was reduced.Simulation results indicate that the SPAD design effec-tively enhances electron multiplication efficiency through the synergistic effect of horizontal and vertical electric fields,achieving a peak detection efficiency of 50.1％.At an excess bias voltage of 3 V,the dark count rate decreased to 764 Hz.The study compares and ana-lyzes the effects of different depletion layer thicknesses and P-Well radius on the performance of the field-controlled enhanced backside SPAD device,determining the optimal structural dimensions.The results provide a new technical approach for high-precision photoelec-tric detection applications based on SPAD and lay the groundwork for further development and application of SPAD technology in scien-tific research and industrial applications.关键词
单光子雪崩二极管/背照式/光子探测效率/暗计数率/电场调控/器件仿真Key words
SPAD/back illumination/photon detection efficiency/dark count rate/electric field regulation/device simulation分类
信息技术与安全科学引用本文复制引用
李聪,李传波,刘力源,王哲,杨旭,田娜,冯鹏,窦润江,于双铭,刘剑,吴南健..电场调控增强型背照式单光子雪崩二极管[J].集成电路与嵌入式系统,2024,24(10):1-8,8.基金项目
国家自然科学基金项目(62334008,62274190,61934007,62134004). （62334008,62274190,61934007,62134004）
