集成电路与嵌入式系统2024，Vol.24Issue(10)：25-30,6.DOI:10.20193/j.ices2097-4191.2024.0030
电磁脉冲冲击下工业芯片LDMOS器件可靠性仿真方法研究
Research on reliability simulation method for industrial-chip-featured LDMOS devices under elctromagntic pulse impact
摘要
Abstract
The reliability simulation of industrial-chip-featured LDMOS(Laterally Diffused Metal Oxide Semiconductor)devices under electromagnetic pulse(EMP)impact can be accomplished using the commercial TCAD(Technology Computer-Aided Design)software,which employs periodic TLP(Transmission Line Pulse)signals as transient input conditions for the degradation module.Due to the sim-plicity of this simulation,it is challenging to cover the common and complex EMP environments encountered by industrial chips.The expected device lifetime differs significantly from the empirical value,making it difficult to accurately assess the stability of chips.In this research,we combine the expectation-maximization algorithm and the reliability theory to optimize this process.Before conducting reliability simulations,the complex electromagnetic pulse signal is preprocessed to reduce the overall complexity.The preprocess significantly improves simulation efficiency and enhances the reliability of the modeling.The method can be integrated as a complementary module for mainstream TCAD simulation software when conducting electromagnetic field simulation,thereby improving the accuracy of reliability simulations for industrial chip devices.关键词
电磁脉冲冲击/LDMOS器件/期望最大算法/可靠性理论Key words
electromagnetic pulse impact/LDMOS devices/expectation-maximization algorithm/reliability theory分类
信息技术与安全科学引用本文复制引用
朱亚星,连亚军,赵东艳,陈燕宁,刘芳,吴波,王凯,梁英宗,郁文,池泊明..电磁脉冲冲击下工业芯片LDMOS器件可靠性仿真方法研究[J].集成电路与嵌入式系统,2024,24(10):25-30,6.基金项目
北京智芯微电子科技有限公司《面向BCD工艺核心器件可靠性仿真方法研究》项目. （）
