原子能科学技术2024，Vol.58Issue(z1)：512-526,15.DOI:10.7538/yzk.2024.youxian.0435
集成电路和功率器件抗辐射工艺加固技术研究综述
Review of Radiation Hardening by Process Technology in Integrated Circuit and Power Device
摘要
Abstract
With the rapid development of aerospace equipment and utilization,especially deep space probes,the radiation hardening level of microelectronics has been widely concerned.Radiation hardening by process technology is one of important methods to improve radiation tolerance of spaceborne electronics.In this paper,the recent research progress on the radiation mechanisms and radiation hardening by process technology of integrated circuits and power devices are introduced and summarized,focusing on total ionizing dose effects and single event effects in space.These reviews can provide a useful reference for the development and applications of radiation hardening by process technology.关键词
工艺加固/总剂量效应/单粒子效应/集成电路/功率器件Key words
radiation hardening by process/total ionizing dose effect/single event effect/integrated circuit/power device分类
能源科技引用本文复制引用
李博,王磊,刘凡宇,陈思远,陆江,舒磊..集成电路和功率器件抗辐射工艺加固技术研究综述[J].原子能科学技术,2024,58(z1):512-526,15.基金项目
国家重点研发计划(2022YFB4401700) （2022YFB4401700）
国家自然科学基金(U22B2043,62374184) （U22B2043,62374184）
