一种具有带外抑制功能的2.4GHz高线性度射频前端接收芯片OA北大核心CSTPCD

To meet the requirements for high linearity and out-of-band signal suppression in the receive system of RF communication,a high linearity RF receiver front-end chip designed based on SOI(Silicon on Insulator)technology has been proposed.The chip integrates low noise amplifier,RF switch and auxiliary circuit.The low noise amplifier adopts MGTR(Multiple Gated Transistor)structure which is based on transconductance nonlinear compensation technology to eliminate the third-order transconductance of transistors,and the resonant network in the matching is applied to suppress the second-order nonlinearity in the amplifier,enabling the LN A to achieve good linearity performance.There is a bypass branch in the RF switch,which bypasses the signal when the input signal is too large to protect the low noise amplifier.The measurement results of the chip show that in the operating frequency band of 2.4 to 2.5 GHz,the receiver front-end chip is powered by a 2 V voltage,with a current of 16 mA,a gain of more than 15.4 dB,a noise figure of less than 1.76 dB,an input and output return loss of less than-15 dB,an input third order modulation point of 11 dBm at 2.4 GHz,a 1 dB compression point of-1.92 dBm,and an out-of-band interference rejection in the 5～6 GHz,and the total area of the chip is 700 μm × 700 μm.