Journal of Semiconductors2024，Vol.45Issue(11)：P.51-57,7.DOI:10.1088/1674-4926/24040023
A novel approach for observing band gap crossings using the SIMS technique in Pb_(1-x)Sn_(x)Te
Zeinab Khosravizadeh 1Piotr Dziawa 1Sania Dad 1Andrzej Dabrowski 1Rafał Jakiela1
作者信息
- 1. Institute of Physics,Polish Academy of Sciences,Aleja Lotnikow 32/46,Warsaw 02668,Poland
- 折叠
摘要
关键词
SIMS/TCI/ionization probability/work function/Pb_(1-x)Sn_(x)Te/band-gap closing分类
数理科学引用本文复制引用
Zeinab Khosravizadeh,Piotr Dziawa,Sania Dad,Andrzej Dabrowski,Rafał Jakiela..A novel approach for observing band gap crossings using the SIMS technique in Pb_(1-x)Sn_(x)Te[J].Journal of Semiconductors,2024,45(11):P.51-57,7.
