首页|期刊导航|Journal of Semiconductors|Erratum:“Study of quantum well mixing induced by impurity-free vacancy in the primary epitaxial wafers of a 915 nm semiconductor laser”[J.Semicond.,2023,44(10),102302]

Erratum:“Study of quantum well mixing induced by impurity-free vacancy in the primary epitaxial wafers of a 915 nm semiconductor laser”[J.Semicond.,2023,44(10),102302]

Tianjiang He Suping Liu Wei Li Li Zhong Xiaoyu Ma Cong Xiong Nan Lin Zhennuo Wang

Journal of Semiconductors2024，Vol.45Issue(11)：P.99-100,2.

Journal of Semiconductors2024，Vol.45Issue(11)：P.99-100,2.DOI:10.1088/1674-4926/24119701

Erratum:“Study of quantum well mixing induced by impurity-free vacancy in the primary epitaxial wafers of a 915 nm semiconductor laser”[J.Semicond.,2023,44(10),102302]

Tianjiang He ¹Suping Liu ²Wei Li ¹Li Zhong ¹Xiaoyu Ma ¹Cong Xiong ²Nan Lin ¹Zhennuo Wang¹

作者信息

1. National Engineering Research Center for Optoelectronic Devices,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China College of Materials Science and Optoelectronics,University of Chinese Academy of Sciences,Beijing 100049,China
2. National Engineering Research Center for Optoelectronic Devices,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China
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摘要

关键词

mixing/quantum/vacancy

分类

信息技术与安全科学

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Tianjiang He,Suping Liu,Wei Li,Li Zhong,Xiaoyu Ma,Cong Xiong,Nan Lin,Zhennuo Wang..Erratum:“Study of quantum well mixing induced by impurity-free vacancy in the primary epitaxial wafers of a 915 nm semiconductor laser”[J.Semicond.,2023,44(10),102302][J].Journal of Semiconductors,2024,45(11):P.99-100,2.

Journal of Semiconductors

OACSTPCDEI

ISSN：1674-4926

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