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First demonstration of a self-aligned p-channel GaN back gate injection transistor

Yingjie Wang Sen Huang Qimeng Jiang Jiaolong Liu Xinhua Wang Wen Liu Liu Wang Jingyuan Shi Jie Fan Xinguo Gao Haibo Yin Ke Wei Xinyu Liu

Journal of Semiconductors2024，Vol.45Issue(11)：P.69-73,5.

Journal of Semiconductors2024，Vol.45Issue(11)：P.69-73,5.DOI:10.1088/1674-4926/24050027

First demonstration of a self-aligned p-channel GaN back gate injection transistor

Yingjie Wang ¹Sen Huang ¹Qimeng Jiang ¹Jiaolong Liu ¹Xinhua Wang ¹Wen Liu ²Liu Wang ¹Jingyuan Shi ³Jie Fan ³Xinguo Gao ³Haibo Yin ³Ke Wei ³Xinyu Liu¹

作者信息

1. High-Frequency High-Voltage Device and Integrated Circuits Research and Development Center,Institute of Microelectronics of the Chinese Academy of Sciences,Beijing 100029,China School of Integrated Circuits,University of Chinese Academy of Sciences,Beijing 100049,China
2. China School of Advanced Technology,Xi''an Jiaotong-Liverpool University,Suzhou 215123,China
3. High-Frequency High-Voltage Device and Integrated Circuits Research and Development Center,Institute of Microelectronics of the Chinese Academy of Sciences,Beijing 100029,China
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摘要

关键词

GaN/p-FETs/self-alignment/back gate/threshold hysteresis/conductivity modulation

分类

信息技术与安全科学

引用本文复制引用

Yingjie Wang,Sen Huang,Qimeng Jiang,Jiaolong Liu,Xinhua Wang,Wen Liu,Liu Wang,Jingyuan Shi,Jie Fan,Xinguo Gao,Haibo Yin,Ke Wei,Xinyu Liu..First demonstration of a self-aligned p-channel GaN back gate injection transistor[J].Journal of Semiconductors,2024,45(11):P.69-73,5.

基金项目

supported in part by the National Key Research and Development Program of China under Grant2022YFB3604400 （）

in part by the Youth Innovation Promotion Association of Chinese Academy Sciences(CAS) （CAS）

in part by CAS-Croucher Funding Scheme under Grant CAS22801 （）

in part by National Natural Science Foundation of China under Grant 62334012,Grant 62074161,Grant 62004213,Grant U20A20208 （）

Grant 62304252 （）

in part by the Beijing Municipal Science and Technology Commission project under Grant Z201100008420009 and Grant Z211100007921018 （）

in part by the University of CAS （）

in part by IMECAS-HKUST-Joint Laboratory of Microelectronics。（）

Journal of Semiconductors

OACSTPCDEI

ISSN：1674-4926

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