首页|期刊导航|Journal of Semiconductors|Demonstration of irradiation-resistant 4H-SiC based photoelectrochemical water splitting
Journal of Semiconductors2024,Vol.45Issue(11):P.74-80,7.DOI:10.1088/1674-4926/24050011
Demonstration of irradiation-resistant 4H-SiC based photoelectrochemical water splitting
摘要
关键词
4H-SiC/nanoporous arrays/water splitting/irradiation resistance/photoanodes分类
数理科学引用本文复制引用
Yan Pei,Wenhao Geng,Lingbo Xu,Can Cui,Xiaodong Pi,Deren Yang,Rong Wang..Demonstration of irradiation-resistant 4H-SiC based photoelectrochemical water splitting[J].Journal of Semiconductors,2024,45(11):P.74-80,7.基金项目
supported by National Natural Science Foundation of China(Grant Nos.62274143 and U22A2075) (Grant Nos.62274143 and U22A2075)
Hangzhou Joint Funds of the Zhejiang Provincial Natural Science Foundation of China(Grant No.LHZSD24E020001) (Grant No.LHZSD24E020001)
Partial support was provided by Leading Innovative and Entrepreneur Team Introduction Program of Hangzhou(Grant No.TD2022012) (Grant No.TD2022012)
Fundamental Research Funds for the Central Universities(Grant No.226-2022-00200) (Grant No.226-2022-00200)
Natural Science Foundation of China for Innovative Research Groups(Grant No.61721005) (Grant No.61721005)
the Open Fund of Zhejiang Provincial Key Laboratory of Wide Bandgap Semiconductors。 ()