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首页|期刊导航|Journal of Semiconductors|Demonstration of irradiation-resistant 4H-SiC based photoelectrochemical water splitting

Demonstration of irradiation-resistant 4H-SiC based photoelectrochemical water splitting

Yan Pei Wenhao Geng Lingbo Xu Can Cui Xiaodong Pi Deren Yang Rong Wang

Journal of Semiconductors2024,Vol.45Issue(11):P.74-80,7.
Journal of Semiconductors2024,Vol.45Issue(11):P.74-80,7.DOI:10.1088/1674-4926/24050011

Demonstration of irradiation-resistant 4H-SiC based photoelectrochemical water splitting

Yan Pei 1Wenhao Geng 2Lingbo Xu 1Can Cui 3Xiaodong Pi 2Deren Yang 2Rong Wang2

作者信息

  • 1. Zhejiang Key Laboratory of Quantum State Control and Optical Field Manipulation,Department of Physics,Zhejiang Sci-Tech University,Hangzhou 310018,China Institute of Advanced Semiconductors&Zhejiang Provincial Key Laboratory of Power Semiconductor Materials and Devices,HangzhouIn no-vation Center,Zhejiang University,Hangzhou 311200,China
  • 2. State Key Laboratory of Silicon and Advanced Semiconductor Materials&School of Materials Science and Engineering,Zhejiang University,Hangzhou 310027,China Institute of Advanced Semiconductors&Zhejiang Provincial Key Laboratory of Power Semiconductor Materials and Devices,HangzhouIn no-vation Center,Zhejiang University,Hangzhou 311200,China
  • 3. Zhejiang Key Laboratory of Quantum State Control and Optical Field Manipulation,Department of Physics,Zhejiang Sci-Tech University,Hangzhou 310018,China
  • 折叠

摘要

关键词

4H-SiC/nanoporous arrays/water splitting/irradiation resistance/photoanodes

分类

数理科学

引用本文复制引用

Yan Pei,Wenhao Geng,Lingbo Xu,Can Cui,Xiaodong Pi,Deren Yang,Rong Wang..Demonstration of irradiation-resistant 4H-SiC based photoelectrochemical water splitting[J].Journal of Semiconductors,2024,45(11):P.74-80,7.

基金项目

supported by National Natural Science Foundation of China(Grant Nos.62274143 and U22A2075) (Grant Nos.62274143 and U22A2075)

Hangzhou Joint Funds of the Zhejiang Provincial Natural Science Foundation of China(Grant No.LHZSD24E020001) (Grant No.LHZSD24E020001)

Partial support was provided by Leading Innovative and Entrepreneur Team Introduction Program of Hangzhou(Grant No.TD2022012) (Grant No.TD2022012)

Fundamental Research Funds for the Central Universities(Grant No.226-2022-00200) (Grant No.226-2022-00200)

Natural Science Foundation of China for Innovative Research Groups(Grant No.61721005) (Grant No.61721005)

the Open Fund of Zhejiang Provincial Key Laboratory of Wide Bandgap Semiconductors。 ()

Journal of Semiconductors

OACSTPCDEI

1674-4926

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