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Selection of dopants and doping sites in semiconductors:the case of AlN

Yi-Feng Zheng Xuefen Cai Su-Huai Wei

Journal of Semiconductors2024，Vol.45Issue(11)：P.46-50,5.

Journal of Semiconductors2024，Vol.45Issue(11)：P.46-50,5.DOI:10.1088/1674-4926/24050032

Selection of dopants and doping sites in semiconductors:the case of AlN

Yi-Feng Zheng ¹Xuefen Cai ²Su-Huai Wei³

作者信息

1. Wenzhou Institute,University of Chinese Academy of Sciences,Wenzhou 325001,China
2. College of Physics and Optoelectronic Engineering,Shenzhen University,Shenzhen 518060,China
3. School of Physics,Eastern Institute of Technology,Ningbo 315200,Chin
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摘要

关键词

defect control/band structure analysis/wide-bandgap semiconductor

分类

数理科学

引用本文复制引用

Yi-Feng Zheng,Xuefen Cai,Su-Huai Wei..Selection of dopants and doping sites in semiconductors:the case of AlN[J].Journal of Semiconductors,2024,45(11):P.46-50,5.

基金项目

supported by the National Natural Science Foundation of China(Grants No.11991060,No.12088101,No.U2230402,and No.12304006) （Grants No.11991060,No.12088101,No.U2230402,and No.12304006）

the Natural Science Foundation of WIUCAS(Grants No.WIUCASQD2023004)。（Grants No.WIUCASQD2023004）

Journal of Semiconductors

OACSTPCDEI

ISSN：1674-4926

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