Journal of Semiconductors2024，Vol.45Issue(11)：P.18-35,18.DOI:10.1088/1674-4926/24050003
Recent developments in superjunction power devices
Chao Ma 1Weizhong Chen 1Teng Liu 1Wentong Zhang 1Bo Zhang1
作者信息
- 1. State Key Laboratory of Electronic Thin Films and Integrated Devices,University of Electronic Science and Technology of China,Chengdu 610054,China
- 折叠
摘要
关键词
super junction/silicon limit/power semiconductor device/design theory分类
信息技术与安全科学引用本文复制引用
Chao Ma,Weizhong Chen,Teng Liu,Wentong Zhang,Bo Zhang..Recent developments in superjunction power devices[J].Journal of Semiconductors,2024,45(11):P.18-35,18.
