光学精密工程2024，Vol.32Issue(19)：2889-2898,10.DOI:10.37188/OPE.20243219.2889
4H-SiC界面飞秒激光退火及其电学性能优化
Femtosecond laser annealing of 4H-SiC interfaces and optimization of their electrical performance
摘要
Abstract
Enhancing the electrical contact properties between SiC and metal interfaces is crucial for ad-vancing SiC materials in high-frequency and high-power devices.This study utilized a 1030 nm near-infra-red femtosecond laser to anneal the 4H-SiC surface,analyzing the effects of various laser annealing param-eters.We examined changes in surface morphology,element distribution,and bonding structure of the la-ser-annealed samples using scanning electron microscopy,X-ray photoelectron spectroscopy,confocal Ra-man spectroscopy,and other methods.The study revealed that improvements in electrical properties at the contact interface result from a disordered graphite structure and SiOx/Si structure with oxygen vacan-cies created by laser annealing.This structure reduces the interface Schottky barrier height,enhances con-ductivity,and shifts the Fermi level of the 4H-SiC surface,significantly boosting interface electrical prop-erties.Femtosecond laser annealing reduced the SiC interface Schottky barrier from 1.43 eV to 0.69 eV and increased the carrier concentration from 5.40×1013 cm-3 to 1.77×1018 cm-3,presenting a novel meth-od for optimizing SiC interface electrical properties with ultrafast laser annealing.关键词
飞秒激光/碳化硅/接触界面/肖特基势垒Key words
femtosecond laser/silicon carbide/contact interface/Schottky barrier分类
电子信息工程引用本文复制引用
任瑜启,岳云帆,李盛,柴年垚,陈襄玉,曾终乐,赵峰毅,王欢,王学文..4H-SiC界面飞秒激光退火及其电学性能优化[J].光学精密工程,2024,32(19):2889-2898,10.基金项目
海南省科技计划三亚崖州湾科技城联合项目(No.2021JJLH0058) （No.2021JJLH0058）
国家重点研发计划资助项目(No.2020YFA0715000) （No.2020YFA0715000）
广东省基础与应用基础研究基金资助项目(No.2021B1515120041) （No.2021B1515120041）
