电器与能效管理技术Issue(10)：42-47,6.DOI:10.16628/j.cnki.2095-8188.2024.10.007
基于开关瞬态振荡过程的半导体器件输出结电容测量方法研究
Research on Measurement Method for Output Junction Capacitance of Semiconductor Devices Based on Transient Switching Oscillation Process
摘要
Abstract
The output capacitance of semiconductor devices exhibits nonlinear changes with increasing voltage.In order to accurately extract the output junction capacitance under high voltage operating conditions,a measured method for the output junction capacitance of semiconductor devices based on the transient switching oscillation process is proposed.Firstly,the mathematical relationship between the high frequency oscillation frequency of device turnoff transient excitation and the junction capacitance are explored,and the corresponding extraction steps is formed.Secondly,the factors affecting the accuracy are discussed from the perspectives of parasitic inductance and parasitic resistance.Finally,a testing platform is built and the extraction results of semiconductor devices of different models and packages are verified.The experiment shows that the proposed method can extract the output junction capacitance value at the rated operating point of the device,and has advantages such as high testing consistency and strong scalability.关键词
非线性/关断振荡/输出结电容/高压半导体器件Key words
non linearity/turn off oscillation/output junction capacitance/high voltage semiconductor devices分类
信息技术与安全科学引用本文复制引用
李昊阳,郑艳文,李皓,陈瑞文,胡斯登..基于开关瞬态振荡过程的半导体器件输出结电容测量方法研究[J].电器与能效管理技术,2024,(10):42-47,6.基金项目
中央高校基本科研业务费专项资金资助(226-2024-00072) （226-2024-00072）
