四川大学学报（自然科学版）2024，Vol.61Issue(6)：9-16,8.DOI:10.19907/j.0490-6756.2024.060002
二氧化硅光栅耦合增强二硫化钼1550 nm红外光电效应
Silicon dioxide grating-coupled enhancement of infrared photodetection in molybdenum disulfide at 1550 nm
摘要
Abstract
Molybdenum disulfide(MoS₂),as a leading two-dimensional semiconductor,shows significant potential for optoelectronic applications.However,the bandgap of multilayer MoS₂ is limited to 1.20 eV,which restricts its light absorption beyond 1033 nm and limits its efficacy in long-wavelength photoelectric de-tection.Dielectric grating engineering offers a powerful optical modulation method,enhancing local light in-tensity and electric field distribution to strengthen light-matter interactions.In this study,we employ silicon di-oxide(SiO₂)dielectric grating engineering to regulate MoS₂ transistors,aiming to explore their photoelectric properties at 1550 nm.Our findings reveal that integrating an SiO₂ dielectric grating in the MoS₂ channel re-gion eliminates transistor hysteresis,reducing it from 1.68 V to 0 V.Furthermore,under 10 mW/cm² illumi-nation,the SiO₂ grating-induced local electric field increases the carrier mobility from 3.52 cm²/(V·s)to 5.67 cm²/(V·s).Simultaneously,the grating structure enhances the MoS₂ transistor's photoresponse from 162 mA/W to 263 mA/W.This work advances the development of two-dimensional semiconductor dielectric grating engineering and offers valuable insights for designing optoelectronic devices utilizing two-dimensional materials for wavelengths above 1033 nm.关键词
二硫化钼/光电子器件/SiO2介质光栅工程/光电效应Key words
Molybdenum disulfide/Optoelectronic devices/SiO2 dielectric grating engineering/Photoelec-tric effect分类
信息技术与安全科学引用本文复制引用
陆鼎,郝昕,罗国凌,姚梦麒,谢修敏,陈庆敏,谭超,王泽高..二氧化硅光栅耦合增强二硫化钼1550 nm红外光电效应[J].四川大学学报（自然科学版）,2024,61(6):9-16,8.基金项目
激光雷达与器件技术实验室开放课题(LLD2023-006) （LLD2023-006）
